Semiconductor Physics, Quantum Electronics & Optoelectronics. 2012. V. 15, N 2. P. 152-155.
DOI: https://doi.org/10.15407/spqeo15.02.152

Mid-IR impurity absorption in As2S3 chalcogenide glasses doped with transition metals
A.P. Paiuk1, A.V. Stronski1, N.V. Vuichyk1, A.A. Gubanova2, Ts.A. Krys’kov2, P.F. Oleksenko1

1V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, prospect Nauky, 03028 Kyiv, Ukraine
2Kamianets-Podilsky National University, Physical and Mathematical Dept. 61, I. Ogienko str., 32300 Kamianets-Podilsky, Ukraine

Abstract. Room temperature IR impurity absorption spectra in 4000-7000 cm-1 (1.4-25 μm) region for chalcogenide glasses of As2S3 doped with chromium (0.5, 1 wt.%) and manganese (0.1, 1, 2, 5 wt.%) have been studied. The effects of chromium and manganese impurities on the transmission spectra are discussed.

Keywords: arsenic sulfide, transmission spectra, transition metals.

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