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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2012. V. 15, N 2. P. 166-169.
Effect of pressure on the properties of Al-SiO2-n-Si<Ni> structures
M. Ulugbek National University of Uzbekistan, Tashkent, Uzbekistan
E-mail: vlasov@uzsci.net
Abstract. We investigated the effect of hydrostatic pressure on relaxation characteristics of the three-layer Al-n-Si<Ni>-SiO2-Al; structures. It was found that 20 min exposure to a pressure of 8 kbars results in reduction of the integral density of surface states, while exerting no influence on the generation centers in the bulk.
Keywords: MOS structure, hydrostatic pressure, Schottky diode.
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