Semiconductor Physics, Quantum Electronics & Optoelectronics. 2013. V. 16, N 2. P. 099-110.
DOI: https://doi.org/10.15407/spqeo16.02.099/

                                                                 

Role of dislocations in formation of ohmic contacts to heavily doped n-Si
A.E. Belyaev1, V.A. Pilipenko2, V.M. Anischik3, T.V. Petlitskaya2, A.V. Sachenko1, V.P. Klad’ko1, R.V. Konakova1, N.S. Boltovets4, T.V. Korostinskaya4, L.M. Kapitanchuk5, Ya.Ya. Kudryk1, A.O. Vinogradov1, V.N. Sheremet1

1V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 03028 Kyiv, Ukraine Phone: 38(044) 525-61-82; fax: 38(044) 525-83-42; e-mail: konakova@isp.kiev.ua
2State centre “Belmicroanaliz”, subsidiary of R&D Centre “Belmicrosystems”, Open Joint Stock Company “Integral”, 220108 Minsk, Belarus
3Belarusian State University, 220030 Minsk, Belarus
4State Enterprise Research Institute “Orion”, 03057 Kyiv, Ukraine
5Paton Institute of Electric Welding, NAS of Ukraine, 03068 Kyiv, Ukraine

Abstract. We present experimental results concerning a high density of structural defects (in particular, dislocations) in the near-contact region of heavily doped n-silicon. They appear in the course of firing ohmic contact at 450 °С for 10 min in a vacuum of ~ 10-4 Pa. These defects lead to appearance of metal shunts that determine the current flow mechanism in these ohmic contacts. The calculated and experimental temperature dependences of contact resistivity, ρс(Т), are in good agreement. It is shown that ρс increases with temperature. This is characteristic of a model of ohmic contacts with a high dislocation density in the near-contact region of semiconductor.

Keywords: contact resistivity, ohmic contact, dislocation density, metal shunts.

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