Role of dislocations in formation of ohmic contacts
to heavily doped n-Si
A.E. Belyaev, V.A. Pilipenko, V.M. Anischik, T.V. Petlitskaya, A.V. Sachenko,
V.P. Klad’ko, R.V. Konakova, N.S. Boltovets, T.V. Korostinskaya,
L.M. Kapitanchuk, Ya.Ya. Kudryk, A.O. Vinogradov, V.N. Sheremet
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.2. P. 099-110. | Full text (PDF)
ZnO as a conductive layer prepared by ALD for solar cells
based on n-CdS/n-CdTe/p-Cu1.8S heterostructure
T.V. Semikina, S.V. Mamykin, M. Godlewski, G. Luka, R. Pietruszka, K. Kopalko,
T.A. Krajewski, S. Gieraltowska, L. Wachnicki, L.N. Shmyryeva
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.2. P. 111-116. | Full text (PDF)
Effect of optical losses irregularity on wideband fiber
Raman amplification for total telecom window in silica fibers
G.S. Felinskyi, M.Y. Dyriv, P.A. Korotkov
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.2. P. 117-122. | Full text (PDF)
The influence of obtaining and heat treatment conditions
on the structure of As2S3-SbSI system
V.M. Rubish, L. Bih, O.A. Mykaylo, O.V. Gorina, V.M. Maryan,
S.M. Gasinets, A.M. Solomon, P. Lazor, S.O. Kostyukevych
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.2. P. 123-127. | Full text (PDF)
Simulating the diffraction grating reflectivity
using effective medium theory
A.A. Goloborodko, N.S. Goloborodko, Ye.A. Oberemok, S.N. Savenkov
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.2. P. 128-131. | Full text (PDF)
Silicon carbide phase transition
in as-grown 3C-6H polytypes junction
S.I. Vlaskina, G.N. Mishinova, V.I. Vlaskin, G.S. Svechnikov, V.E. Rodionov, S.W. Lee
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.2. P. 132-135. | Full text (PDF)
Modified correlation equation in the FSDP-related void-based model for As2S(Se)3 chalcogenide glasses T.S. Kavetskyy
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.2. P. 136-139. | Full text (PDF)
Optimization of conditions for treatment of ZnSe crystal surfaces
by chemical etching
V.Ì. Tomashyk, À.S. Kravtsova, Z.F. Tomashyk, ².B. Stratiychuk, S.Ì. Galkin
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.2. P. 140-145. | Full text (PDF)
Influence of cation substitution on phase transition
and optical absorption edge in Cu6(P1-xAsx)S5I mixed crystals
I.P. Studenyak, M. Kranjcec, M.I. Kayla, V.Yu. Izai, A.F. Orliukas
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.2. P. 146-151. | Full text (PDF)
Electron mobility in the GaAs/InGaAs/GaAs quantum wells V.V. Vainberg, A.S. Pylypchuk, N.V. Baidus and B.N. Zvonkov
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.2. P. 152-161. | Full text (PDF)
Effect of neutron irradiation
on non-equilibrium HfB2-B4C composites
I.M. Totsky, V.V. Shynkarenko, O.Yu. Popov, V.A. Makara
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.2. P. 162-165. | Full text (PDF)
Optical and electronic properties of Cu-Mn solid solutions V.M. Bondar, V.S. Stashchuk, O.P. Polianska, Ie.O. Chernukha, B.A. Tsuk, V.O. Lysiuk
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.2. P. 166-169. | Full text (PDF)
Temperature changes of the exciton transition energy
in lead di-iodide nanofilms
O.V. Pugantseva, V.M. Kramar, I.V. Fesiv, O.O. Kudryavtsev
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.2. P. 170-176. | Full text (PDF)
Periodic structures with spherical alumina particles:
Transmission and reflection spectra
A.A. Miskevich, V.A. Loiko
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.2. P. 177-184. | Full text (PDF)
Light passage through the polymer film of liquid crystal droplets with modified boundary conditions V.A. Loiko, V.Ya. Zyryanov, M.N. Krakhalev, A.V. Konkolovich, A.A. Miskevich
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.2. P. 185-189. | Full text (PDF)
High-pole LED lighting system Y.V. Trofimov, S.I. Lishik, V.V. Dolgushin, Y.V. Kernazhytski
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.2. P. 190-193. | Full text (PDF)
White LED modules encapsulation features Yu.V. Trofimov, V.S. Posedko, E.F. Ostretsov, V.I. Tsvirko, L.N. Survilo, N.N. Marus
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.2. P. 194-197. | Full text (PDF)
On application of heat-conductive plastics in LED technology Yu.V. Trofimov, S.I. Lishik, P.P. Pershukevich
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.2. P. 198-200. | Full text (PDF)
Quasi-active thermal control in LED street lights Y.V. Trofimov, S.I. Lishik, P.P. Pershukevich, V.I. Tsvirko
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.2. P. 201-205. | Full text (PDF)
Features of the development of LED spotlight
for local illumination of extended objects
K.A. Kudrautsau, Y.V. Kernazhytski, V.I. Tsvirka, Yu.V. Trofimov, V.S. Posedko, À.S. Posedko
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.2. P. 206-209. | Full text (PDF)
Europium coordination compounds based on carbacylamidophosphate ligands for metal-organic light-emitting diodes (MOLEDs) O.O. Litsis, V.A. Ovchynnikov, T.Yu. Sliva, V.M. Amirkhanov, V.M. Sorokin, M.A. Minyailo,
Yu.V. Kolomzarov, P.A. Tytarenko, I.E. Minakova
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.2. P. 210-215. | Full text (PDF)
Low-temperature deposition of silicon dioxide films
in high-density plasma
A. Yasunas, D. Kotov, V. Shiripov, U. Radzionay
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.2. P. 216-219. | Full text (PDF)
Structure effect and orientation distribution of azo dyes
on optical anisotropy of dyed PVA-films
L.N. Filippovich, N.G. Ariko, H.A. Almodarresiyeh, S.N. Shahab, P.M. Malashko, V.E. Agabekov
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.2. P. 220-223. | Full text (PDF)
