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Semiconductor Physics,
  Quantum Electronics &
     Optoelectronics
     (SPQEO)

 ISSN 1605-6582 (On-line)  |  ISSN 1560-8034 (Print)  |  ISSN 1606-1365 (CD)









 

Contents Volume 16 N 2
DOI: https://doi.org/10.15407/spqeo16.02

Role of dislocations in formation of ohmic contacts to heavily doped n-Si
A.E. Belyaev, V.A. Pilipenko, V.M. Anischik, T.V. Petlitskaya, A.V. Sachenko, V.P. Kladĺko, R.V. Konakova, N.S. Boltovets, T.V. Korostinskaya, L.M. Kapitanchuk, Ya.Ya. Kudryk, A.O. Vinogradov, V.N. Sheremet
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.2. P. 099-110.
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ZnO as a conductive layer prepared by ALD for solar cells based on n-CdS/n-CdTe/p-Cu1.8S heterostructure
T.V. Semikina, S.V. Mamykin, M. Godlewski, G. Luka, R. Pietruszka, K. Kopalko, T.A. Krajewski, S. Gieraltowska, L. Wachnicki, L.N. Shmyryeva
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.2. P. 111-116.
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Effect of optical losses irregularity on wideband fiber Raman amplification for total telecom window in silica fibers
G.S. Felinskyi, M.Y. Dyriv, P.A. Korotkov
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.2. P. 117-122.
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The influence of obtaining and heat treatment conditions on the structure of As2S3-SbSI system
V.M. Rubish, L. Bih, O.A. Mykaylo, O.V. Gorina, V.M. Maryan, S.M. Gasinets, A.M. Solomon, P. Lazor, S.O. Kostyukevych
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.2. P. 123-127.
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Simulating the diffraction grating reflectivity using effective medium theory
A.A. Goloborodko, N.S. Goloborodko, Ye.A. Oberemok, S.N. Savenkov
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.2. P. 128-131.
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Silicon carbide phase transition in as-grown 3C-6H polytypes junction
S.I. Vlaskina, G.N. Mishinova, V.I. Vlaskin, G.S. Svechnikov, V.E. Rodionov, S.W. Lee
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.2. P. 132-135.
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Modified correlation equation in the FSDP-related void-based model for As2S(Se)3 chalcogenide glasses
T.S. Kavetskyy
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.2. P. 136-139.
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Optimization of conditions for treatment of ZnSe crystal surfaces by chemical etching
V.╠. Tomashyk, └.S. Kravtsova, Z.F. Tomashyk, ▓.B. Stratiychuk, S.╠. Galkin
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.2. P. 140-145.
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Influence of cation substitution on phase transition and optical absorption edge in Cu6(P1-xAsx)S5I mixed crystals
I.P. Studenyak, M. Kranjcec, M.I. Kayla, V.Yu. Izai, A.F. Orliukas
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.2. P. 146-151.
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Electron mobility in the GaAs/InGaAs/GaAs quantum wells
V.V. Vainberg, A.S. Pylypchuk, N.V. Baidus and B.N. Zvonkov
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.2. P. 152-161.
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Effect of neutron irradiation on non-equilibrium HfB2-B4C composites
I.M. Totsky, V.V. Shynkarenko, O.Yu. Popov, V.A. Makara
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.2. P. 162-165.
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Optical and electronic properties of Cu-Mn solid solutions
V.M. Bondar, V.S. Stashchuk, O.P. Polianska, Ie.O. Chernukha, B.A. Tsuk, V.O. Lysiuk
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.2. P. 166-169.
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Temperature changes of the exciton transition energy in lead di-iodide nanofilms
O.V. Pugantseva, V.M. Kramar, I.V. Fesiv, O.O. Kudryavtsev
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.2. P. 170-176.
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Periodic structures with spherical alumina particles: Transmission and reflection spectra
A.A. Miskevich, V.A. Loiko
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.2. P. 177-184.
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Light passage through the polymer film of liquid crystal droplets with modified boundary conditions
V.A. Loiko, V.Ya. Zyryanov, M.N. Krakhalev, A.V. Konkolovich, A.A. Miskevich
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.2. P. 185-189.
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High-pole LED lighting system
Y.V. Trofimov, S.I. Lishik, V.V. Dolgushin, Y.V. Kernazhytski
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.2. P. 190-193.
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White LED modules encapsulation features
Yu.V. Trofimov, V.S. Posedko, E.F. Ostretsov, V.I. Tsvirko, L.N. Survilo, N.N. Marus
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.2. P. 194-197.
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On application of heat-conductive plastics in LED technology
Yu.V. Trofimov, S.I. Lishik, P.P. Pershukevich
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.2. P. 198-200.
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Quasi-active thermal control in LED street lights
Y.V. Trofimov, S.I. Lishik, P.P. Pershukevich, V.I. Tsvirko
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.2. P. 201-205.
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Features of the development of LED spotlight for local illumination of extended objects
K.A. Kudrautsau, Y.V. Kernazhytski, V.I. Tsvirka, Yu.V. Trofimov, V.S. Posedko, └.S. Posedko
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.2. P. 206-209.
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Europium coordination compounds based on carbacylamidophosphate ligands for metal-organic light-emitting diodes (MOLEDs)
O.O. Litsis, V.A. Ovchynnikov, T.Yu. Sliva, V.M. Amirkhanov, V.M. Sorokin, M.A. Minyailo, Yu.V. Kolomzarov, P.A. Tytarenko, I.E. Minakova
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.2. P. 210-215.
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Low-temperature deposition of silicon dioxide films in high-density plasma
A. Yasunas, D. Kotov, V. Shiripov, U. Radzionay
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.2. P. 216-219.
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Structure effect and orientation distribution of azo dyes on optical anisotropy of dyed PVA-films
L.N. Filippovich, N.G. Ariko, H.A. Almodarresiyeh, S.N. Shahab, P.M. Malashko, V.E. Agabekov
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.2. P. 220-223.
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