¹Institute of Semiconductor Physics, National Academy of Science of Ukraine 45, prospect Nauky, 03028 Kyiv, Ukraine; e-mail: businkaa@mail.ru
²Yeoju Institute of Technology, 200 Myeongseong-ro, Gyeonggi–do, 469–705 Korea
³Taras Shevchenko Kyiv National University, 64, Volodymyrska str., 03033 Kyiv, Ukraine
⁴Sensartech, 2540 Lobelia Dr., Oxnard, 93036 California, USA; e-mail: vlady@sensartech.com
⁵Physics Department, Dongguk University, Pildong 3-26, Chung-ku, Seoul, Korea

Abstract. Perfect pure (concentration of donors ~ ) single crystals with joint polytypes (hexagonal-cubic) or heterojunction investigated using low temperature (4.2 K and 77 K) photoluminescence. Phase transformation started exactly from lamella between polytypes. β → α ( ) SiC transformation distributes from lamella as from nuclear. Photoluminescence spectra are similar to the spectrum demonstrated by pure perfect 3C-SiC crystal in the field of mechanical deformation. In the zone of joint polytypes and zone of the plastic deformation in perfect 3C-SiC crystal after bending, the same stacking faults are localized. Luminescence in the disordered α-zone as a result of phase transformation is represented by a set of intensely pronounced stacking fault spectra. These spectra reside on more or less intense background band, which are emission of the donor-acceptor pairs in SiC. Excitation luminescence spectra confirm appearance of stacking faults which are responsible for metastable intermediate micro- and nano-SiC structures. Solid-phase transformations β → α are related with the same intermediate metastable microstructure that take place in the transformation α → β.

Keywords: silicon carbide, phase transition, 3C-6H polytype.

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