Semiconductor Physics, Quantum Electronics & Optoelectronics. 2013. V. 16, N 2. P. 140-145.
DOI: https://doi.org/10.15407/spqeo16.02.140/

                                                                 

Optimization of conditions for treatment of ZnSe crystal surfaces by chemical etching
V.М. Tomashyk1, А.S. Kravtsova1, Z.F. Tomashyk1, І.B. Stratiychuk1, S.М. Galkin2

1V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 41, prospect Nauky, 03028 Kyiv; e-mail: graceful_anna@mail.ru
2Institute for Scintillation Materials, National Academy of Sciences of Ukraine, 60, Lenin Ave, Kharkiv

Abstract. The process of chemical polishing the undoped and doped ZnSe crystals surface with H2O2 – HBr etchants has been studied. The dependence of the samples polishing rate on the concentration of H2O2 in HBr solution has been investigated. Surface states after chemical etching have been established using electron and atomic force microscopies, and it was shown that the surface state is improved after chemical etching. Etchant selection to develop slow polishing compositions for chemical-mechanical polishing the investigated materials has been made. Concentration regions of polishing solutions have been found for various types of ZnSe surface treatment: to remove the damaged layer, to control the etching rate, to obtain samples of a given thickness.

Keywords: semiconductor, zinc selenide, etchant, crystal, chemical-mechanical polishing, chemical-dynamic polishing.

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