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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2013. V. 16, N 2. P. 216-219.
Low-temperature deposition of silicon dioxide films
in high-density plasma
Abstract. One of the basic operations in the LED (light-emitting diode) chip fabrication technique is formation of dielectric coatings for the purpose of insulation and surface passivation of the LED structure. Oxides and nitrides of silicon obtained by physical or chemical vapor deposition techniques can act as such a coating. Low conformity of physical vapor deposition techniques limits the possibility of their application in a number of cases at LED mesostructures passivation. This work represents the results of experiments on silicon dioxide dielectric films deposition in the inductive coupled plasma under different operation conditions. The findings prove the possibility of low-temperature deposition of thick silicon dioxide films with high conformality by the HDPCVD (high-density plasma chemical vapor deposition) technique.
Keywords: inductive coupled plasma, HDPCVD, TEOS, silicon dioxide, mesa construction.
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