Semiconductor Physics, Quantum Electronics & Optoelectronics. 2014. V. 17, N 2. P. 160-164.
https://doi.org/10.15407/spqeo17.02.160

                                                                 

Concentration-size dependences for the electron energy in Alx Ga1-xAs/GaAs/AlxGa1-xAs nanofilms
D.V. Kondryuk, V.M. Kramar, O.P. Kroitor

Yuriy Fedkovich Chernivtsi National University,
2, Kotsyubynsky str., 58012 Chernivtsi, Ukraine
E-mail:v.kramar@chnu.edu.ua

Abstract. Using approximation of dielectric continuum and the Green function method, studied in this work is the influence of electron-phonon interaction on position of the bottom of the ground energy band for electron in the quantum well of a finite depth. Considering the example of a plain nano-heterostructure with a quantum well based on the double heterojunction AlxGa1-xAs/GaAs (nanofilm), the authors have calculated the electron energy for a varied thickness of the film. It has been studied the influence of barrier material composition as well as electron-phonon interaction on the electron energy.

Keywords: nano-heterostructure, quantum well, spectrum, electron-phonon interaction.

Manuscript received 22.01.14; revised version received 17.04.14; accepted for publication 12.06.14; published online 30.06.14.

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