Semiconductor Physics, Quantum Electronics & Optoelectronics. 2014. V. 17, N 2. P. 184-187.
https://doi.org/10.15407/spqeo17.02.184

                                                                 

Influence of complex defects on electrophysical properties of GaP light emitting diodes
O. Konoreva1, E. Malyj1, S. Mamykin 2,*, I. Petrenko 1, M. Pinkovska1, V. Tartachnyk1

1Institute for Nuclear Researches, NAS of Ukraine,
47, prospect Nauky, 03028 Kyiv, Ukraine
2V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine,
41, prospect Nauky, 03028 Kyiv, Ukraine
*Corresponding author phone: +38(044)-525-37-49; e-mail: myrglory@yahoo.com

Abstract. In order to estimate the role of complex defects on GaP light emitting diodes (LED) operation, luminescent and electrical characteristics of GaP LEDs irradiated with reactor neutrons have been studied. It has been stated that nonradiative levels of radiation defects affect electroluminescence quenching. From the analysis of the tunnel current, the density of dislocations in the depleted part of the p-n junction was obtained. Neutron induced disorder regions do not change the tunnel component of the direct current of red diodes, increasing the dislocation density, because the carrier flow along the "tunnel shunts" is blocked.

Keywords: gallium phosphide, light emitting diode, defect, luminescence and quantum yield.

Manuscript received 21.01.14; revised version received 12.05.14; accepted for publication 12.06.14; published online 30.06.14.

Full Text (PDF)

Back to Volume 17 N2