|
Semiconductor
Physics, Quantum Electronics & Optoelectronics. 2014. V. 17, N
2. P. 184-187.
References 1. F.P. Shubert, Light Emitting Diodes, Fizmatlit Publ., Moscow, 2008 (in Russian).2. A. Berg, P. Din, Light Emitting Diodes, Mir Publ., Moscow, 1979 (in Russian). 3. V.V. Evstropov, Yu.V. Zhiliayev, M. Dzhumaeva, N. Nazarov, Tunnel-excess current in nondegenerated barrier p-n and m-s silicon-containing III-V compound semiconductor structures. Fizika i tekhnika poluprovodnikov, 31(2), p. 152-158 (1997), in Russian. 4. V.V. Evstropov, Yu.V. Zhiliayev, M. Dzhumaeva, N. Nazarov, A.A. Sitnikova, L.M. Fedorov, Dislocation origin and a model of the excessive tunnel current in GaP p-n structure. Fizika i tekhnika poluprovodnikov, 34(11), p. 1357-1368 (2000), in 5. D.V. Lang, L.C. Kimerling, Observation of a thermal defect annealing in GaP . Appl. Phys. Lett. 28, p. 248 (1976). https://doi.org/10.1063/1.88726 6. A. Borsakovskyj, O. Gontaruk, V. Kochkin, P. Litovchenko, V. Opilat, I. Petrenko, V Tartachnyk, Radiation influence on characteristics of GaP light emitting diodes. Functional Materials, 16, p. 313-318 (2009). 7. A.V. Gomonnai, D.B. Goyer, O.O. Goushcha, Yu.M. Azhniuk, I.G. Megela, M. Kranjcec, Radiative recombination in electron-irradiated GaP crystals . J. Optoelectron. Adv. Mater. (3), p. 641-646 (2003). 8. T. Endo, T. Nichimura, K. Nakakuki, M. Kitamura, K. Sugijama, DLTS study for energy-broadening of the defect level on introducing radiation damage in GaP . Jpn. J. Appl. Phys. 27(11), p. 2107-2112 (1988). https://doi.org/10.1143/JJAP.27.2107 9. T. Endo, Yu. Hirosaki, E. Uchida, H. Miyake, K. Sugiyama, Deep levels in electron-irradiated GaP at 10 MeV . Jpn. J. Appl. Phys. 28(10), p. 1864-1870 (1989). https://doi.org/10.1143/JJAP.28.1864 |