Semiconductor Physics, Quantum Electronics & Optoelectronics. 2015. V. 18, N 2. P. 226-229.
https://doi.org/10.15407/spqeo18.02.226

Effect of heating rate on oxidation process of fine-dispersed ZnS:Mn obtained by SHS
Yu.Yu. Bacherikov1*, A.G. Zhuk1, O.B. Okhrimenko1, D.L. Kardashov2, S.V. Kozitskiy2

1V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 41, prospect Nauky, 03028 Kyiv, Ukraine; *e-mail: Yuyu@isp.kiev.ua
2Odessa National Maritime Academy 8, Didrikhson str., 65029 Odessa, Ukraine

Abstract. The influence of annealing at 350 °C in air atmosphere on the luminescent characteristics of powdered ZnS: Mn obtained by self-propagating high-temperature synthesis has been studied. It was shown that variation in material heating rate due to changes in the annealing temperature results in different behavior of oxidative processes. It has been ascertained that the slow heating of powdered ZnS:Mn, compared with the rapid one in the presence of oxygen, promotes active oxidation of ZnS and formation of Frenkel pairs, increases mileage of defects acting as sensitizers, and their localization near Mn2+. The model which explains the observed changes in the luminescence and PLE spectra has been presented.

Keywords: ZnS:Mn, luminescence, oxidation, self-propagating high-temperature synthesis.

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