Semiconductor Physics, Quantum Electronics and Optoelectronics (SPQEO)

Journal cover page

Semiconductor Physics,
  Quantum Electronics & 
     Optoelectronics
     SPQEO

 ISSN 1605-6582 (On-line)  |  ISSN 1560-8034 (Print)
 DOI: https://doi.org/10.15407/spqeo



Semiconductor Physics, Quantum Electronics and Optoelectronics (SPQEO) is open access, free download peer-reviewed journal licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License

Current Issue
Vol 22 N1 (2019)



Volume 22 (2019) Volume 21 (2018) Volume 20 (2017) Volume 19 (2016) Volume 18 (2015) Volume 17 (2014) Volume 16 (2013) Volume 15 (2012) Volume 14 (2011) Volume 13 (2010) Volume 12 (2009) Volume 11 (2008) Volume 10 (2007) Volume 09 (2006) Volume 08 (2005) Volume 07 (2004) Volume 06 (2003) Volume 05 (2002) Volume 04 (2001) Volume 03 (2000) Volume 02 (1999) Volume 01 (1998)

Contents Volume 18 N 2
DOI: https://doi.org/10.15407/spqeo18.02

Structure and optical properties of AlN films obtained using the cathodic arc plasma deposition technique
A.P. Shapovalov, I.V. Korotash, E.M. Rudenko, F.F. Sizov, D.S. Dubyna, L.S. Osipov, D.Yu. Polotskiy, Z.F. Tsybrii, A.A. Korchovyi
Semiconductor physics, quantum electronics and optoelectronics. 2015. V.18, N.2. P. 117-122.
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Influence of dimensional static and dynamic charges on conduction in the active zone of a quantum cascade laser
A.M. Gryschuk, I.V. Boiko
Semiconductor physics, quantum electronics and optoelectronics. 2015. V.18, N.2. P. 123-127.
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Temperature changes in the exciton absorption band observed in flat double nanoheterostructures GaAs/AlxGa1-xAs
D.V. Kondryuk, A.V. Derevyanchuk, V.M. Kramar, A.A. Kudryavtsev
Semiconductor physics, quantum electronics and optoelectronics. 2015. V.18, N.2. P. 128-133.
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About self-activated orange emission in ZnO
I.V. Markevich, T.R. Stara, V.O. Bondarenko
Semiconductor physics, quantum electronics and optoelectronics. 2015. V.18, N.2. P. 134-137.
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Dependence of the collision integral on electric field
I.I. Boiko
Semiconductor physics, quantum electronics and optoelectronics. 2015. V.18, N.2. P. 138-143.
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Methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors
V.S. Slipokurov, M.N. Dub, A.K. Tkachenko, Ya.Ya. Kudryk
Semiconductor physics, quantum electronics and optoelectronics. 2015. V.18, N.2. P. 144-146.
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Azimuthally invariant phase tomography of optically anisotropic sections of biological tissues
M.I. Sidor, A.O. Karachevtsev, V.P. Prysyazhnyuk
Semiconductor physics, quantum electronics and optoelectronics. 2015. V.18, N.2. P. 147-151.
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Statistical and fractal analyses of autofluorescence of myocardium tissue images in diagnostics of acute coronary insufficiency
O.V. Dubolazov, M.I. Sidor, A.O. Karachevtsev
Semiconductor physics, quantum electronics and optoelectronics. 2015. V.18, N.2. P. 152-157.
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Azimuthally invariant laser polarimetry of polycrystalline smears of biological liquids
Yu.O. Ushenko, O.V. Dubolazov, A.V. Motrich, G.B. Bodnar
Semiconductor physics, quantum electronics and optoelectronics. 2015. V.18, N.2. P. 158-163.
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Mueller-matrix reconstruction of parameters of phase and amplitude anisotropy in diagnostics of endometriosis and infertility
A.G. Ushenko, M.M. Dominikov, I.I. Lakusta, G.D. Koval
Semiconductor physics, quantum electronics and optoelectronics. 2015. V.18, N.2. P. 164-169.
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Multifunctional polarization tomography of birefringence networks of biological crystals
O.V. Dubolazov, O.I. Olar, D.M. Burkovets
Semiconductor physics, quantum electronics and optoelectronics. 2015. V.18, N.2. P. 170-174.
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Autofluorescent polarimetry in diagnostics of endometriosis and infertility
A.G. Ushenko, G.D. Koval, D.M. Burkovets, V.O. Savich
Semiconductor physics, quantum electronics and optoelectronics. 2015. V.18, N.2. P. 175-180.
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Fluorescent Mueller-matrix polarimetry of biological tissues in differentiation of benign and malignant tumors
Yu.O. Ushenko, I.I. Lakusta, O.I. Olar, O.Yu. Novakovska
Semiconductor physics, quantum electronics and optoelectronics. 2015. V.18, N.2. P. 181-187.
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Temperature studies of optical parameters in (Ag3AsS3)0.6(As2S3)0.4 thin films
I.P. Studenyak, M.M. Kutsyk, Y.Y. Rati, V.Yu. Izai, S. Kokenyesi, L. Daroci, R. Bohdan
Semiconductor physics, quantum electronics and optoelectronics. 2015. V.18, N.2. P. 188-192.
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Polarization properties of longitudinally inhomogeneous dichroic medium
I.S. Kolomiets, S.N. Savenkov, Ye.A. Oberemok
Semiconductor physics, quantum electronics and optoelectronics. 2015. V.18, N.2. P. 193-199.
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Development of modeling methods and algorithm for calculating the current-voltage characteristics of LED modules
V.V. Shynkarenko
Semiconductor physics, quantum electronics and optoelectronics. 2015. V.18, N.2. P. 200-204.
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Influence of superionic nanoparticles Cu6PS5I on dielectric properties of nematic liquid crystal 6ÑÍÂÒ
I.P. Studenyak, P.Yu. Demko, A.V. Bendak, O.V. Kovalchuk, T.M. Kovalchuk, V. Lisy, P. Kopcansky, M. Timko, N. Tomasovicova, V. Zavisova,V. Gdovinova, J. Miskuf, I.V. Oleinikova, A.I. Lad, N.M. Kucheriavchenkova
Semiconductor physics, quantum electronics and optoelectronics. 2015. V.18, N.2. P. 205-208.
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Structure of photoluminescence DL-spectra and phase transformation in lightly doped SiC crystals and films
S.I. Vlaskina, G.N. Mishinova, V.I. Vlaskin, V.E. Rodionov, G.S. Svechnikov
Semiconductor physics, quantum electronics and optoelectronics. 2015. V.18, N.2. P. 209-214.
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Method for determination of the absorption coefficient in films based on photoluminophore suspension for white LEDs
D.N. Khmil, A.M. Kamuz, P.F. Oleksenko, V.G. Kamuz, N.G. Aleksenko, O.A. Kamuz
Semiconductor physics, quantum electronics and optoelectronics. 2015. V.18, N.2. P. 215-219.
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Radiation-stimulated processes in silicon structures with contacts based on TiN
M.U. Nasyrov, A.B. Ataubaeva
Semiconductor physics, quantum electronics and optoelectronics. 2015. V.18, N.2. P. 220-225.
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Effect of heating rate on oxidation process of fine-dispersed ZnS:Mn obtained by SHS
Yu.Yu. Bacherikov, A.G. Zhuk, O.B. Okhrimenko, D.L. Kardashov, S.V. Kozitskiy
Semiconductor physics, quantum electronics and optoelectronics. 2015. V.18, N.2. P. 226-229.
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