Semiconductor Physics, Quantum Electronics & Optoelectronics. 2016. V. 19, N 2. P. 149-155.
DOI: https://doi.org/10.15407/spqeo19.02.149

Detection of IR and sub/THz radiation using MCT thin layer structures: design of the chip, optical elements and antenna pattern
F.F. Sizov1, Z.F. Tsybrii1, V.V. Zabudsky1, M.V. Sakhno1, A.V. Shevchik-Shekera1, S.Ye. Dukhnin1, A.G. Golenkov1, E. Dieguez2, S.A. Dvoretsky3

1V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, prospect Nauky, 03680 Kyiv, Ukraine
2Universidad Autonoma de Madrid, Cantoblanco, 28049 Madrid, Spain
3A.V. Rzhanov Institute of Semiconductor Physics, RAS, pr. Lavrentieva, 13, Novosibirsk, Russia, 630090

Abstract. Two-color un-cooled narrow-gap MCT (mercury-cadmium-telluride) semiconductor thin layers, grown by liquid phase epitaxy or molecular beam epitaxy methods on high resistivity CdZnTe or GaAs substrates, with bow-type antennas were considered both as sub-terahertz direct detection bolometers and 3...10-micrometer infrared photoconductors. Optical system with aspheric THz lenses were designed and manufactured. An antenna pattern of structures on the thick substrate was discussed, and sensitivity of detector in both IR and sub-THz regions was measured.

Keywords: MCT, un-cooled two-color detector, antenna pattern.

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