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Semiconductor Physics,
  Quantum Electronics &
     Optoelectronics
     (SPQEO)

 ISSN 1605-6582 (On-line)  |  ISSN 1560-8034 (Print)  |  ISSN 1606-1365 (CD)









 

Contents Volume 19 N 2
DOI: https://doi.org/10.15407/spqeo19.02

Performance limits of terahertz zero biased rectifying detectors for direct detection
A.G. Golenkov, F.F. Sizov
Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.2. P. 129-138.
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Protective applications of vacuum-deposited perfluoropolymer films
K.P. Grytsenko, Yu.V. Kolomzarov, O.E. Belyaev, S. Schrader
Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.2. P. 139-148.
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Detection of IR and sub/THz radiation using MCT thin layer structures: design of the chip, optical elements and antenna pattern
F.F. Sizov, Z.F. Tsybrii, V.V. Zabudsky, M.V. Sakhno, A.V. Shevchik-Shekera, S.Ye. Dukhnin, A.G. Golenkov, E. Dieguez, S.A. Dvoretsky
Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.2. P. 149-155.
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Enhanced optical transmission of the triple-layer resonant waveguide structure
I.Ya. Yaremchuk, V.M. Fitio, Ya.V. Bobitski
Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.2. P. 156-161.
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Van der Waals interaction between surface and particle with giant polarizability
K.A. Makhnovets
Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.2. P. 162-168.
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New method for estimating the refractive index of optical materials in spectrally selective elements
A.A. Manko, G.S. Svechnikov
Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.2. P. 169-172.
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Influence of field dependent form of collision integral on kinetic coefficients
I.I. Boiko
Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.2. P. 173-182.
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Low doses effect in GaP light-emitting diodes
O.M. Hontaruk, O.V. Konoreva, Ye.V. Malyi, I.V. Petrenko, M.B. Pinkovska, O.I. Radkevych, V.P. Tartachnyk
Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.2. P. 183-187.
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Precise measurements of the wavelength in KrCl laser spectral region (222 nm)
N.G. Zubrilin, I.A. Pavlov, S.M. Baschenko, O.M. Tkachenko
Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.2. P. 188-191.
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Optical studies of as-deposited and annealed Cu7GeS5I thin films
I.P. Studenyak, A.V. Bendak, S.O. Rybak, V.Yu. Izai, P. Kúš, M. Mikula
Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.2. P. 192-196.
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ZnTe-based UV sensors
S.Yu. Pavelets, Yu.N. Bobrenko, T.V. Semikina, G.I. Sheremetova, В.S. Аtdaiev, K.B. Krulikovska, М.А. Маzin
Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.2. P. 197-200.
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Dielectric spectroscopy of CuInSe2 single crystals
S.N. Mustafaeva, S.M. Asadov, D.T. Guseinov, I. Kasimoglu
Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.2. P. 201-204.
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Structural properties of chalcogenide glasses As2Se3 doped with manganese
O.P. Paiuk, L.A. Revutska, A.V. Stronski, A.Yo. Gudymenko, H.V. Stanchu, A.A. Gubanova, Ts.A. Kryskov
Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.2. P. 205-207.
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Variational approach to the calculation of the lowest Wannier exciton state in wide type-II single semiconductor quantum wells
G.V. Vertsimakha
Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.2. P. 208-214.
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Integration of LED/SC chips (matrix) in reverse mode with solar energy storage
V.I. Osinsky, I. Masol, I. Feldman, A. Diagilev, N.O. Sukhovii
Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.2. P. 215-219.
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Possible mechanism of inhibition of virus infectivity with nanoparticles
O.L. Khylko, N.M. Rusinchuk
Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.2. P. 220-224.
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