Performance limits of terahertz zero biased rectifying detectors for direct detection
A.G. Golenkov, F.F. Sizov Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.2. P. 129-138. | Full text (PDF)
Protective applications of vacuum-deposited perfluoropolymer films K.P. Grytsenko, Yu.V. Kolomzarov, O.E. Belyaev,
S. Schrader
Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.2. P. 139-148. | Full text (PDF)
Detection of IR and sub/THz radiation using MCT thin layer structures: design of the chip, optical elements and antenna pattern F.F. Sizov, Z.F. Tsybrii, V.V. Zabudsky, M.V. Sakhno, A.V. Shevchik-Shekera, S.Ye. Dukhnin, A.G. Golenkov, E. Dieguez, S.A. Dvoretsky Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.2. P. 149-155. | Full text (PDF)
Enhanced optical transmission of the triple-layer resonant waveguide structure I.Ya. Yaremchuk, V.M. Fitio, Ya.V. Bobitski Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.2. P. 156-161. | Full text (PDF)
Van der Waals interaction between surface and particle with giant polarizability K.A. Makhnovets Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.2. P. 162-168. | Full text (PDF)
New method for estimating the refractive index of optical materials in spectrally selective elements A.A. Manko, G.S. Svechnikov Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.2. P. 169-172. | Full text (PDF)
Influence of field dependent form of collision integral on kinetic coefficients I.I. Boiko Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.2. P. 173-182. | Full text (PDF)
Low doses effect in GaP light-emitting diodes O.M. Hontaruk, O.V. Konoreva, Ye.V. Malyi, I.V. Petrenko, M.B. Pinkovska, O.I. Radkevych, V.P. Tartachnyk
Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.2. P. 183-187. | Full text (PDF)
Precise measurements of the wavelength in KrCl laser spectral region (222 nm) N.G. Zubrilin, I.A. Pavlov, S.M. Baschenko,
O.M. Tkachenko
Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.2. P. 188-191. | Full text (PDF)
Optical studies of as-deposited and annealed Cu7GeS5I thin films I.P. Studenyak, A.V. Bendak, S.O. Rybak, V.Yu. Izai, P. Kus, M. Mikula Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.2. P. 192-196. | Full text (PDF)
ZnTe-based UV sensors S.Yu. Pavelets, Yu.N. Bobrenko, T.V. Semikina, G.I. Sheremetova, Â.S. Àtdaiev, K.B. Krulikovska, Ì.À. Ìàzin
Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.2. P. 197-200. | Full text (PDF)
Dielectric spectroscopy of CuInSe2 single crystals S.N. Mustafaeva, S.M. Asadov, D.T. Guseinov, I. Kasimoglu
Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.2. P. 201-204. | Full text (PDF)
Structural properties of chalcogenide glasses As2Se3 doped with manganese O.P. Paiuk, L.A. Revutska, A.V. Stronski,
A.Yo. Gudymenko, H.V. Stanchu, A.A. Gubanova, Ts.A. Kryskov
Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.2. P. 205-207. | Full text (PDF)
Variational approach to the calculation of the lowest Wannier exciton state in wide type-II single semiconductor quantum wells G.V. Vertsimakha Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.2. P. 208-214. | Full text (PDF)
Integration of LED/SC chips (matrix) in reverse mode with solar energy storage V.I. Osinsky, I. Masol, I. Feldman, A. Diagilev, N.O. Sukhovii Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.2. P. 215-219. | Full text (PDF)
Possible mechanism of inhibition of virus infectivity with nanoparticles O.L. Khylko, N.M. Rusinchuk Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.2. P. 220-224. | Full text (PDF)