Semiconductor Physics, Quantum Electronics & Optoelectronics. 2016. V. 19, N 2. P. 192-196.
DOI: https://doi.org/10.15407/spqeo19.02.192

Optical studies of as-deposited and annealed Cu7GeS5I thin films
I.P. Studenyak1, A.V. Bendak1, S.O. Rybak1, V.Yu. Izai1, P. Kúš2, M. Mikula2

1Uzhhorod National University, Faculty of Physics, 3, Narodna Sq., 88000 Uzhhorod, Ukraine
2 Faculty of Mathematics, Physics and Informatics, Comenius University, Mlynska dolina, 84248 Bratislava, Slovakia, E-mail:studenyak@dr.com

Abstract. Cu7GeS5I thin films were obtained by non-reactive radio frequency magnetron sputtering onto silicate glass substrates. Optical transmission spectra of as-deposited and annealed Cu7GeS5I thin films were measured in the temperature interval 77–300 K. The temperature behaviour of Urbach absorption edge and dispersion of refractive index for as-deposited and annealed Cu7GeS5I thin films was analyzed. Influence of annealing on the optical parameters and disordering processes in Cu7GeS5I thin films was studied.

Keywords: thin film, magnetron sputtering, annealing, optical absorption, refractive index, Urbach rule.

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