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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2016. V. 19, N 2. P. 197-200.
ZnTe-based UV sensors
Abstract. A р-ZnTe/n-CdSe heterojunction was used for making polycrystalline ZnTe-based UV sensors. The heteropair components have the same crystal structure and close lattice parameters. ZnTe and CdSe were grown using thermal evaporation and quasi-closed space condensation. A transparent current collecting electrode for the surface-barrier structure of р-ZnTe/n-CdSe heterojunction was made of degenerate p-Cu1.8S. Surface relief of ZnTe grown on different substrates was studied with scanning atomic force microscopy. The energy band offset diagrams of heterojunction are built and photosensitivity spectra are presented. Keywords: zinc telluride, heterojunction, UV sensor, surface-barrier structure, energy band offset diagram, crystal structure.
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