Semiconductor Physics, Quantum Electronics & Optoelectronics. 2016. V. 19, N 2. P. 197-200.
DOI: https://doi.org/10.15407/spqeo19.02.197


ZnTe-based UV sensors
S.Yu. Pavelets, Yu.N. Bobrenko, T.V. Semikina, G.I. Sheremetova, В.S. Аtdaiev, K.B. Krulikovska, М.А. Маzin

V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine 41, prospect Nauky, 03680 Kyiv, Ukraine Tel.: 38 (044) 525-61-52; e-mail: pavelets@voliacable.com

Abstract. A р-ZnTe/n-CdSe heterojunction was used for making polycrystalline ZnTe-based UV sensors. The heteropair components have the same crystal structure and close lattice parameters. ZnTe and CdSe were grown using thermal evaporation and quasi-closed space condensation. A transparent current collecting electrode for the surface-barrier structure of р-ZnTe/n-CdSe heterojunction was made of degenerate p-Cu1.8S. Surface relief of ZnTe grown on different substrates was studied with scanning atomic force microscopy. The energy band offset diagrams of heterojunction are built and photosensitivity spectra are presented.

Keywords: zinc telluride, heterojunction, UV sensor, surface-barrier structure, energy band offset diagram, crystal structure.

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