Semiconductor Physics, Quantum Electronics & Optoelectronics. 2016. V. 19, N 2. P. 201-204.
DOI: https://doi.org/10.15407/spqeo19.02.201

Dielectric spectroscopy of CuInSe2 single crystals
S.N. Mustafaeva1, S.M. Asadov2, D.T. Guseinov1, I. Kasimoglu1

1Institute of Physics, Azerbaijan National Academy of Sciences, G. Javid Pr. 131, AZ-1143 Baku, Azerbaijan E-mail: solmust@gmail.com 2Institute of Catalysis and Inorganic Chemistry, Azerbaijan National Academy of Sciences, G. Javid Pr. 113, Baku, AZ-1143, E-mail: mirasadov@gmail.com Telephone: (99412)539-59-13; Fax: (99412)539-59-61

Abstract. The results of high-frequency dielectric measurements with obtained α-CuInSe2 single crystals provided an opportunity to determine the mechanisms of dielectric losses and charge transport, and also to evaluate the density of states at the Fermi level; the average time of charge carrier hopping between localized states, average hopping distance, scattering of trap states near the Fermi level; concentration of deep traps responsible for hopping conductivity in alternate electric fields.

Keywords: single crystal, X-ray diffraction, frequency dispersion, dielectric permittivity, loss tangent, hopping conductivity.

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