Semiconductor Physics, Quantum Electronics & Optoelectronics, 20 (2), P. 153-158 (2017).
DOI: https://doi.org/10.15407/spqeo20.02.153
Oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine,
41, prospect Nauky, 03028 Kyiv, Ukraine;
e-mail: romb@isp.kiev.ua
Abstract. A new method to prepare vanadium oxide with a high temperature coefficient of resistance (TCR) and low resistance for uncooled micro-bolometers has been proposed. Amorphous vanadium oxide films with V2O3 phase inclusions have been fabricated on silicon and silica substrates at the temperature 200 °C by using the direct current reactive magnetron sputtering method in controlled Ar/O2 atmosphere. Additional oxygen ion implantation in the deposited films allows to synthesize vanadium oxide with crystalline inclusions of VO2 and V2O5 phases under the low temperature annealing. The following long low-temperature annealing provides formation of VOx (at x 2) film with the TCR close to 7.0%/°C.
Keywords: resistance temperature coefficient, vanadium oxide films, reactive magnetron sputtering, low-temperature annealing, oxygen implantation.
T.M. Sabov, O.S. Oberemok, O.V. Dubikovskyi, V.P. Melnik, V.P. Kladko, B.M. Romanyuk, V.G. Popov, O.Yo. Gudymenko, N.V. Safriuk
This work is licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License.