Semiconductor Physics, Quantum Electronics & Optoelectronics, 20 (2), P. 153-158 (2017).

Oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient
T.M. Sabov, O.S. Oberemok, O.V. Dubikovskyi, V.P. Melnik, V.P. Kladko, B.M. Romanyuk, V.G. Popov, O.Yo. Gudymenko, N.V. Safriuk

V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, prospect Nauky, 03028 Kyiv, Ukraine; e-mail:

Abstract. A new method to prepare vanadium oxide with a high temperature coefficient of resistance (TCR) and low resistance for uncooled micro-bolometers has been proposed. Amorphous vanadium oxide films with V2O3 phase inclusions have been fabricated on silicon and silica substrates at the temperature 200 °C by using the direct current reactive magnetron sputtering method in controlled Ar/O2 atmosphere. Additional oxygen ion implantation in the deposited films allows to synthesize vanadium oxide with crystalline inclusions of VO2 and V2O5 phases under the low temperature annealing. The following long low-temperature annealing provides formation of VOx (at x  2) film with the TCR close to 7.0%/°C.

Keywords: resistance temperature coefficient, vanadium oxide films, reactive magnetron sputtering, low-temperature annealing, oxygen implantation.

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