Semiconductor Physics, Quantum Electronics and Optoelectronics (SPQEO)

Journal cover page

Semiconductor Physics,
  Quantum Electronics & 
     Optoelectronics
     SPQEO

 ISSN 1605-6582 (On-line)  |  ISSN 1560-8034 (Print)
 DOI: https://doi.org/10.15407/spqeo



Semiconductor Physics, Quantum Electronics and Optoelectronics (SPQEO) is open access, free download peer-reviewed journal licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License

Current Issue
Vol 22 N1 (2019)



Volume 22 (2019) Volume 21 (2018) Volume 20 (2017) Volume 19 (2016) Volume 18 (2015) Volume 17 (2014) Volume 16 (2013) Volume 15 (2012) Volume 14 (2011) Volume 13 (2010) Volume 12 (2009) Volume 11 (2008) Volume 10 (2007) Volume 09 (2006) Volume 08 (2005) Volume 07 (2004) Volume 06 (2003) Volume 05 (2002) Volume 04 (2001) Volume 03 (2000) Volume 02 (1999) Volume 01 (1998)

Contents Volume 20 N 2
DOI: https://doi.org/10.15407/spqeo20.02

Oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient
T.M. Sabov, O.S. Oberemok, O.V. Dubikovskyi, V.P. Melnik, V.P. Kladko, B.M. Romanyuk, V.G. Popov, O.Yo. Gudymenko, N.V. Safriuk
Semiconductor physics, quantum electronics and optoelectronics, 20 (2), P. 153-158 (2017).
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Surface enhanced imaging and IR spectroscopy of the biological cells on the nanostructured gold film
G.I. Dovbeshko, O.P. Gnatyuk, S.O. Karakhim, T.P. Doroshenko, V.R. Romanyuk
Semiconductor physics, quantum electronics and optoelectronics, 20 (2), P. 159-167 (2017).
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Concerning the depletion width of a radial p-n junction and its influence on electrical properties of the diode
V.L. Borblik
Semiconductor physics, quantum electronics and optoelectronics, 20 (2), P. 168-172 (2017).
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InHgCdTeIn structures with symmetric nonlinear IV characteristics for sub-THz direct detection
N.I. Kukhtaruk, V.V. Zabudsky, A.V. Shevchik-Shekera, N.N. Mikhailov, F.F. Sizov
Semiconductor physics, quantum electronics and optoelectronics, 20 (2), 173-178 (2017).
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Nanostructuring the SiOx layers by using laser-induced self-organization
O.V. Steblova, L.L. Fedorenko, A.A. Evtukh
Semiconductor physics, quantum electronics and optoelectronics. 2017. , 20 (2), P. 179-184 (2017).
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London forces in highly oriented pyrolytic graphite
L.V. Poperenko, S.G. Rozouvan, I.A. Shaykevich
Semiconductor physics, quantum electronics and optoelectronics, 20 (2), P. 185-190 (2017).
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Luminescent properties of fine-dispersed self-propagating high-temperature synthesized ZnS:Cu,Mg
Yu.Yu. Bacherikov, A.G. Zhuk, R.V. Kurichka, O.B. Okhrimenko, A.V. Gilchuk, O.V. Shcherbyna, M.V. Herkalyuk
Semiconductor physics, quantum electronics and optoelectronics, 20 (2), P. 191-194 (2017).
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New evidence of the hopping nature of the excess tunnel current in heavily doped silicon p-n diodes at cryogenic temperatures
V. L. Borblik, Yu. M. Shwarts, M. M. Shwarts, A. B. Aleinikov
Semiconductor physics, quantum electronics and optoelectronics, 20 (2), P. 195-198 (2017).
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Nanostructure of amorphous films
N.L. Dyakonenko, V.A. Lykah, A.V. Sinelnik, I.A. Korzh, V.I. Bilozertseva
Semiconductor physics, quantum electronics and optoelectronics, 20 (2), P. 199-203 (2017).
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Analysis of a quantum well structure optical integrated device
Sh.M. Eladl and M.H. Saad
Semiconductor physics, quantum electronics and optoelectronics, 20 (2), P. 204-209 (2017).
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Impact of traps on current-voltage characteristic of n+-n-n+ diode
P.M. Kruglenko
Semiconductor physics, quantum electronics and optoelectronics, 20 (2), P. 210-216 (2017).
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Polishing etchant compositions for the chemical treatment of the PbTe and Pb1xSnxTe solid solutions single crystals and methods for their processing. Review
G.P. Malanych
Semiconductor physics, quantum electronics and optoelectronics, 20 (2), P. 217-223 (2017).
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Quantum-size effects in semiconductor heterosystems
L.A. Matveeva, E.F. Venger, E.Yu. Kolyadina, P.L. Neluba
Semiconductor physics, quantum electronics and optoelectronics, 20 (2), P. 224-230 (2017).
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High-frequency electromagnetic radiation of germanium crystals in magnetic fields
G.V. Milenin, V.V. Milenin, R.A. Redko
Semiconductor physics, quantum electronics and optoelectronics, 20 (2), P. 231-234 (2017).
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Novel concepts of negative-n optics in masters level educational courses
G.Yu. Rudko
Semiconductor physics, quantum electronics and optoelectronics, 20 (2), P. 235-239 (2017).
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Using nanosphere lithography for fabrication of a multilayered system of ordered gold nanoparticles
V.I. Styopkin, V. Liakhovetskyi, V. Rudenko
Semiconductor physics, quantum electronics and optoelectronics, 20 (2), P. 240-245 (2017).
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Influence of X-ray irradiation on the optical absorption edge and refractive index dispersion in Cu6PS5I-based thin films deposited using magnetron sputtering
I.P. Studenyak, M.M. Kutsyk, A.V. Bendak, V.Yu. Izai, P. Kus, M. Mikula
Semiconductor physics, quantum electronics and optoelectronics, 20 (2), P. 246-249 (2017).
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Transformation of impurity-defect centers in single crystals CdTe:Cl under the influence of microwaves
N.D. Vakhnyak, O.P. Lotsko, S.I. Budzulyak, L.A. Demchyna, D.V. Korbutyak, R.V. Konakova, R.A. Redko, O.B. Okhrimenko, N.I. Berezovska
Semiconductor physics, quantum electronics and optoelectronics, 20 (2), P. 250-253 (2017).
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Some new technology aspects for quantum enestor through A3B5 multicomponent nanoepitaxy
V. Osinsky, I. Masol, N. Lyahova, N. Suhoviy, M.Onachenko , A. Osinsky
Semiconductor physics, quantum electronics and optoelectronics, 20 (2), P. 254-258 (2017).
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Relaxation of photovoltage in ITO-Ge-Si heterojunction with Ge nanostructured thin films
S.A. Iliash, Yu.V.Hyrka, S.V. Kondratenko, V.S.Lysenko, Yu.M.Kozyrev, V.V.Lendel
Semiconductor physics, quantum electronics and optoelectronics, 20 (2), P. 259-261 (2017).
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The influence of physical and technological magnetron sputtering modes on the structure and optical properties of CdS and CdTe films
G.S. Khrypunov, G.I. Kopach, M.M. Harchenko, A.. Dobrozhan
Semiconductor physics, quantum electronics and optoelectronics, 20 (2), P. 262-267 (2017).
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