Semiconductor Physics, Quantum Electronics & Optoelectronics. 2017. V. 20, N 2. P. 173-178 (2017).
DOI: https://doi.org/10.15407/spqeo20.02.173


References

1.    Sizov F., Rogalski A. THz detectors. Progr. Quant. Electr. 2010. 34, No. 5. P. 278–347.
https://doi.org/10.1016/j.pquantelec.2010.06.002
 
2.    Shashkin V.I., Vostokov N.V. Sensing microwave-terahertz detectors based on metal-semiconductor-metal structures with symmetrical I–V characteristic. IEEE J. Electron. Devices Soc. 2013. 1, No. 3, P. 76−82.
https://doi.org/10.1109/JEDS.2013.2252235
 
3.    Vostokov N.V., Korolev S.A. and Shashkin V.I. Application of low-barrier metal-semiconductor-metal structures for the detection of microwave signals. Technical Physics. 2014. 59, No. 7. P. 1036−1040.
https://doi.org/10.1134/S1063784214070287
 
4.    Sze S.M. and Ng Kwok K. Physics of Semiconductor Devices, 3-rd Edition. John Wiley and Sons, New York, 2007.
 
5.    Voitsekhovskii A.V., Nesmelov S.N., Dzyadukh S.M. et al. Investigation of electrophysical properties of MIS structures on the basis of MBE HgCdTe HES. Prikladnaya fizika. 2010. No. 6. P. 95–99 (in Russian).
 
6.    Wenus J., Rutkowski J., and Rogalski A. Two-dimensional analysis of double-layer heterojunction HgCdTe photodiodes. IEEE Trans. Electron. Devices. 2001. 48, No. 7. P. 1326–1332.
https://doi.org/10.1109/16.930647
 
7.    Hansen G.L., Schmit J.L. and Gasselman T.N. Energy gap versus alloy composition and temperature in Hg1–xCdxTe. J. Appl. Phys. 1982. 53. P. 7099-7101.
https://doi.org/10.1063/1.330018
 
8.    Stafeev V.I. Structure and properties of CdxHg1–xTe–metal contacts. Semiconductors. 2009. 43, No. 5. P. 608–611.
https://doi.org/10.1134/S1063782609050133
 
9.    Dobrovolsky V. and Sizov F. THz/sub-THz bolometer based on electron heating in a semiconductor waveguide. Opto-Electronics Rev. 2010. 18, No. 3. P. 250–258.
https://doi.org/10.2478/s11772-010-1033-8
 
10.    Zabudsky V., Sizov F., Momot N. et al. THz/sub-THz direct detection detector on the basis of electron/hole heating in MCT layers. Semicond. Sci. Technol. 2012. 27, No. 4. P. 045002.
https://doi.org/10.1088/0268-1242/27/4/045002
 
11.    Cowley A.M. Quantitative comparison of solid-state microwave detectors. IEEE Trans. Microwave Theory and Techniques. MTT-14. 1966. 14, No. 12. P. 588–602.
 
12.    Maestrini A., Thomas B., Wang H. et al. Schottky diode-based terahertz frequency multipliers and mixers. C. R. Physique. 2010. 11. P. 480–495.
https://doi.org/10.1016/j.crhy.2010.05.002
 
13.    Balanis C.A. Antenna Theory: Analysis and Design, 3rd ed. Wiley, 2005.