Semiconductor Physics, Quantum Electronics & Optoelectronics. 2017. V. 20, N 2. P. 210-216 (2017).
DOI: https://doi.org/10.15407/spqeo20.02.210


References

1.    Pekar S.I. Theory of the contact between metal and dielectric or semiconductor. Zhurnal Eksperiment. and Teoreticheskoi Fiziki. 1940. 10. P. 341–348 (in Russian).
 
2.    Weaver J.H. Formation of Defect-Free Metal/Semiconductor Contacts. Minnesota University, Minneapolis Department of Chemical Engineering and Materials Science, 1992.
 
3.    Mott N.F. and Gurney R.W. Electronic Processes in Ionic Crystals. Clarendon Press, 1940.
 
4.    Smith R.W. and R.A. Space-charge-limited currents in single crystals of cadmium sulfide. Phys. Rev. 1955. 97, No. 6. P. 1531–1537.
https://doi.org/10.1103/PhysRev.97.1531
 
5.    Zhang Yuan and Blom P.W.M. Field-assisted ionization of molecular doping in conjugated polymer. Organic Electronics. 2010. 11. P. 1261–1267.
https://doi.org/10.1016/j.orgel.2010.03.012
 
6.    Zhang X.-G. and Pantelides S.T. Theory of space charge limited currents. Phys. Rev. Lett. 2012. 108, No. 26. P. 266602.
https://doi.org/10.1103/PhysRevLett.108.266602
 
7.    Kogan S. Electronic Noise and Fluctuations in Solids. Cambridge University Press, 2008.
 
8.    Sydoruk V.A., Vitusevich S.A., Hardtdegen H. et al. Electric current and noise in long GaN nanowires in the space-charge limited transport regime. Fluctuation and Noise Lett. 2017. 16, No. 1. P. 1750010 (12 p.).
 
9.    Kochelap V.A., Sokolov V.N., Bulashenko O.M., and Rubi J.M. Coulomb suppression of surface noise. Appl. Phys. Lett. 2001. 78, No. 14. P. 2003–2005.
https://doi.org/10.1063/1.1360227
 
10.    Sokolov V.N. et al. Phase-plane analysis and classification of transient regimes for high-field electron transport in nitride semiconductors. J. Appl. Phys. 2004. 96. P. 6492–6503.
https://doi.org/10.1063/1.1808900
 
11.    Li Sheng S. and Thurber W.R. The dopant density and temperature dependence of electron mobility and resistivity in n-type silicon. Solid-State Electron. 1977. 20. P. 609–616.
https://doi.org/10.1016/0038-1101(77)90100-9
 
12.    Fistul V.I., Iglitsyn M.I. and Omelyanovskii E.M. Mobility of electrons in germanium strongly doped with arsenic. Fizika tverdogo tela. 1962. 4, No. 4. P. 784–785 (in Russian).
 
13.    Andrianov D.G. et al. Interaction of carriers with localized magnetic moments in InSb-Mn and InAs-Mn. Fizikai tekhnika poluprovodnikov. 1977. 11, No. 7. P. 738–742 (in Russian).
 
14.    Chin V.W.L., Tansley T.L. and Osotchan T. Electron mobilities in gallium, indium, and aluminum nitrides. J. Appl. Phys. 1994. 75. P. 7365–7372.
https://doi.org/10.1063/1.356650
 
15.    Sze S.M. and Ng Kwok K. Physics of Semiconductor Devices. John Wiley & Sons, 2006.
https://doi.org/10.1002/0470068329
 
16.    Rode D.L. Ch. 1: Low-Field Electron Transport. Semiconductors and Semimetals. 1975. 10. P. 1–89.
https://doi.org/10.1016/S0080-8784(08)60331-2