Semiconductor Physics, Quantum Electronics & Optoelectronics, 20 (2), P. 210-216 (2017).
DOI: https://doi.org/10.15407/spqeo20.02.210
Impact of traps on current-voltage characteristic of n+-n-n+ diode
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine,
41, prospect Nauky, 03680 Kyiv, Ukraine,
E-mail: p.kruglenko@gmail.com
Abstract. A model of n+-n-n+ diode is analyzed using analytical and numerical methods. First, it was conducted a phase-plane analysis, which was aimed at further calculations for low and high injection approximations. A numerical method was used to calculate changes of the field, bias and concentration throughout the diode for different current values. Expected impoverishment of free-charge carriers near the anode, and enrichment near the cathode was observed. Current-voltage characteristics were built for different concentrations of traps in base. Increasing bias for same value of current with increasing traps concentration was predicted.
Keywords: semiconductor diode, phase-plane, trap influence.
P.M. Kruglenko
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