Semiconductor Physics, Quantum Electronics & Optoelectronics, 20 (2), P. 224-230 (2017).
DOI: https://doi.org/10.15407/spqeo20.02.224
Quantum-size effects in semiconductor heterosystems
V.E. Lashkarov Institute of Semiconductor Physics NAS of Ukraine,
45, prospect Nauky, 03028 Kyiv, Ukraine
E-mail: matveeva@isp.kiev.ua
Abstract. Created on the basis of Si, GaAs and C60 fullerenes were low-dimensional heterostructures with a surface quantum-size effect at the film-substrate interface. There have been defined technological conditions of its appearance. Using modulation electroreflectance spectroscopy, calculated were spectral broadening parameters, the energy relaxation time of excited light charge carriers, the energy of quantized levels and the width of the quantum wells.
Keywords: heterostructures, interface, electroreflectance, electronic parameters, quantum-size effect.
L.A. Matveeva, E.F. Venger, E.Yu. Kolyadina, P.L. Neluba
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