Semiconductor Physics, Quantum Electronics & Optoelectronics, 20 (2), P. 246-249 (2017).

Influence of X-ray irradiation on the optical absorption edge and refractive index dispersion in Cu6PS5I-based thin films deposited using magnetron sputtering
I.P. Studenyak1, M.M. Kutsyk1, A.V. Bendak1, V.Yu. Izai1, P. Kúš2, M. Mikula2

1Uzhhorod National University, Faculty of Physics, 3, Narodna Sq., 88000 Uzhhorod, Ukraine
2Comenius University, Faculty of Mathematics, Physics and Informatics, Mlynska dolina, 84248 Bratislava, Slovakia,

Abstract. Cu6PS5I-based thin films were deposited using non-reactive radio-frequency magnetron sputtering. Structural studies of thin films were performed by scanning electron microscopy, their chemical composition were determined using energy-dispersive X-ray spectroscopy. As-deposited thin films were irradiated with wideband radiation of Cu-anode X-ray tube at different exposition times. Optical transmission spectra of X-ray irradiated Cu5.56P1.66S4.93I0.85 thin films were measured depending on irradiation time. The Urbach absorption edge and dispersion of refractive index for X-ray irradiated Cu5.56P1.66S4.93I0.85 thin films were studied. It has been revealed the nonlinear decrease of energy pseudogap and nonlinear increase of refractive index with increase of X-ray irradiation time.

Keywords: thin film, magnetron sputtering, X-ray irradiation, optical absorption, refractive index.

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