Semiconductor Physics, Quantum Electronics & Optoelectronics, 20 (2), P. 250-253 (2017).

Transformation of impurity-defect centers in single crystals CdTe:Cl under the influence of microwaves
N.D. Vakhnyak1, O.P. Lotsko1, S.I. Budzulyak1, L.A. Demchyna1, D.V. Korbutyak1, R.V. Konakova1, R.A. Red’ko1, O.B. Okhrimenko1, N.I. Berezovska2

1V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, prospect Nauky, 03680 Kyiv, Ukraine Corresponding author e-mail:
2Taras Shevchenko National University of Kyiv, Physics Department, 64/13, Volodymyrska str., 01601 Kyiv, Ukraine

Abstract. Performed in this work are the researches of the influence of microwave irradiation (2.45 GHz, 24 GHz) on spectra of low-temperature (T = 2 K) photoluminescence (PL) in single crystals CdTe:Cl. Transformation of impurity-defect centers in CdTe:Cl responsible for PL within the spectral range 1.3 to 1.5 eV under microwave irradiation was analyzed. The parameter of electron-phonon interaction (Huang–Rhys factor) for the donor-acceptor PL band, which depends on the time of microwave irradiation, has been calculated.

Keywords: photoluminescence, microwave irradiation, Huang–Rhys factor, donor-acceptor pair, impurity-defect center.

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