Semiconductor Physics, Quantum Electronics & Optoelectronics, 20 (2), P. 259-261 (2017).

Relaxation of photovoltage in ITO-Ge-Si heterojunction with Ge nanostructured thin films
S.A. Iliash1, Yu.V. Hyrka1, S.V. Kondratenko1, V.S. Lysenko2, Yu.M. Kozyrev3, V.V. Lendel1

1Taras Shevchenko National University of Kyiv, 64/13, Volodymyrs’ka str., 01601 Kyiv, Ukraine E-mail:
2Institute of Semiconductor Physics, 41, prospect Nauky, 03680 Kyiv, Ukraine
3O.O. Chuiko Institute of Surface Chemistry, 17, Generala Naumova str., 03164 Kyiv, Ukraine

Abstract. The paper focuses on experimental study of the photovoltage time decay in ITO-Ge-Si heterojunction with Ge nanostructured thin film. Kinetics under 650 nm excitation within the temperature range 80 to 290 K are successfully described by a single exponential function with temperature-dependent decay constants. Photovoltage relaxation is modeled taking into account the hopping nature of electron transport in the band of localized states.

Keywords: heterostructure, ITO-Ge-Si heterojunction, thin films, photovoltage, transient voltage.

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