Semiconductor Physics, Quantum Electronics & Optoelectronics, 20 (2), P. 259-261 (2017).
Relaxation of photovoltage in ITO-Ge-Si heterojunction
with Ge nanostructured thin films
1Taras Shevchenko National University of Kyiv, 64/13, Volodymyrs’ka str., 01601 Kyiv, Ukraine
E-mail: iliashsviatoslav@gmail.com
Abstract. The paper focuses on experimental study of the photovoltage time decay in ITO-Ge-Si heterojunction with Ge nanostructured thin film. Kinetics under 650 nm excitation within the temperature range 80 to 290 K are successfully described by a single exponential function with temperature-dependent decay constants. Photovoltage relaxation is modeled taking into account the hopping nature of electron transport in the band of localized states.
Keywords: heterostructure, ITO-Ge-Si heterojunction, thin films, photovoltage, transient voltage.
This work is licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License.
|