Abstract

Semiconductor Physics, Quantum Electronics & Optoelectronics, 21 (2), P. 167-172 (2018).
DOI: https://doi.org/10.15407/spqeo21.02.167


Deposition and optical absorption studies of Cu–As–S thin films
I.P. Studenyak1, Z.R. Molnar1, I.I. Makauz1, M.M. Pop1, L. Daróci2, S. Kökényesi2, I. Szabo2, A. Csik3

1Faculty of Physics, Uzhhorod National University, 3, Narodna Sq., 88000 Uzhhorod, Ukraine, E-mail:studenyak@dr.com
2Faculty of Science and Technology, University of Debrecen, 18/a Bem Sq., 4026 Debrecen, Hungary
3ATOMKI, 18/c Bem Sq., 4026 Debrecen, Hungary

Abstract. Cu–As–S thin films were deposited using the thermal evaporation technique. Optical transmission spectra of Cu 0.1 As 2.1 S 3.1 thin films were measured within the temperature range 77...300 K. Temperature behaviour of absorption edge inherent to Cu 0.1 As 2.1 S 3.1 thin films was studied. Temperature and compositional dependences of optical parameters in Cu–As–S thin films have been analyzed. It has been revealed that the energy pseudogap decrease and Urbach energy increase with the copper content increase take place in Cu–As–S thin films. The influence of or

Keywords: thin film, thermal evaporation, optical absorption, energy pseudogap, Urbach energy.

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