Semiconductor Physics, Quantum Electronics & Optoelectronics, 22 (2), P. 201-205 (2019).

Electrostatics of the nanowire radial p-i-n diode
V.L. Borblik

V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, prospect Nauky, 03680 Kyiv, Ukraine E-mail:

Abstract. In this paper, the electrostatic theory of the nanowire radial core-shell p-i-n homojunction has been considered. The carried out calculations show that, in contrast to planar p-i-n diode, the built-in electric field of the nanowire radial p-i-n diode proves to be inhomogeneous. This field reaches its maximum in the region of the i-layer adjoining to the core. When moving away the i-layer from the nanowire center, the degree of field inhomogeneity decays, and both edge values of the field in the i-layer reach eventually the magnitude, which takes place in analogous planar p-i-n diode. This magnitude can be both higher and lower than the maximal field in the nanowire p-i-n diode (depending on doping conditions). Simultaneously, the capacitance of the nanowire p-i-n diode can both increase and decrease in its value, going, at the same time, to weak voltage dependence inherent to the planar p-i-n diode.

Keywords: nanostructures, core-shells nanowire, radial p-i-n junction, capacitance.

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