Semiconductor Physics, Quantum Electronics & Optoelectronics, 22 (2), P. 201-205 (2019).
Electrostatics of the nanowire radial p-i-n diode
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine,
41, prospect Nauky, 03680 Kyiv, Ukraine
E-mail: borblik@isp.kiev.ua
Abstract. In this paper, the electrostatic theory of the nanowire radial core-shell p-i-n homojunction has been considered. The carried out calculations show that, in contrast to planar p-i-n diode, the built-in electric field of the nanowire radial p-i-n diode proves to be inhomogeneous. This field reaches its maximum in the region of the i-layer adjoining to the core. When moving away the i-layer from the nanowire center, the degree of field inhomogeneity decays, and both edge values of the field in the i-layer reach eventually the magnitude, which takes place in analogous planar p-i-n diode. This magnitude can be both higher and lower than the maximal field in the nanowire p-i-n diode (depending on doping conditions). Simultaneously, the capacitance of the nanowire p-i-n diode can both increase and decrease in its value, going, at the same time, to weak voltage dependence inherent to the planar p-i-n diode.
Keywords: nanostructures, core-shells nanowire, radial p-i-n junction, capacitance. This work is licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License.
|