Semiconductor Physics, Quantum Electronics & Optoelectronics, 22 (2), P. 206-214 (2019).
DOI: https://doi.org/10.15407/spqeo22.02.206

Formation of nanocrystals and their properties during tin induced and laser light stimulated crystallization of amorphous silicon
V.B. Neimash1, A.S. Nikolenko2, V.V. Strelchuk2, P.Ye. Shepeliavyi2, P.M. Litvinchuk1, V.V. Melnyk1, I.V. Olhovik1

1Institute of Physics, NAS of Ukraine 46, prospect Nauky, 03680 Kyiv, Ukraine
2V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine 41, prospect Nauky, 03680 Kyiv, Ukraine E-mail: neimash@gmail.com

Abstract. The effect of laser light intensity and temperature on the induced tin crystallization of amorphous silicon has been investigated using the methods of Raman scattering and optical microscopy. The existence of non-thermal mechanisms of the laser light influence on formation of silicon nanocrystals and their Raman spectra has been experimentally demonstrated. Photoionization of silicon and electron-phonon interaction are considered as possible reasons for the detected effects. The prospects of their application in new technologies providing production of nano-silicon films for solar cells have been discussed.

Keywords: amorphous silicon, crystallization, tin, qq photoionization, electron-phonon interaction, solar cells.

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