Semiconductor Physics, Quantum Electronics & Optoelectronics, 22 (2), P. 215-223 (2019).
DOI: https://doi.org/10.15407/spqeo22.02.215


Efficient SERS substrates based on laterally ordered gold nanostructures made using interference lithography
O.M. Hreshchuk1, V.O. Yukhymchuk1, V.M. Dzhagan1,4, V.A. Danko1, V.I. Min’ko1, I.Z. Indutnyi1, P.E. Shepeliavyi1, P.M. Lytvyn1, E. Sheregii2, S. Prokhorenko2,3, J. Polit2, D. Zak2, D. Płoch2, M.Ya. Valakh1

1V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45, prospect Nauky, 03680 Kyiv, Ukraine
2Center for Microelectronics and Nanotechnology University of Rzeszów, ul. Pigonia, 35-959 Rzeszów, Poland
3Department of Measuring Information Technologies, Lviv Polytechnic National University, Ukraine
4Taras Shevchenko National University of Kyiv, 01601, Kyiv, Ukraine E-mail: Hreshchuk@gmail.com

Abstract. Laterally ordered gold nanoisland arrays made using interference lithography has been investigated in this work as SERS substrates. The developed substrates demonstrate performance in enhancing Raman signal of common dye analyte (crystal violet (CV)) comparable to commercial SERS substrates, with the lowest detectable concentration of CV ~10−6…10−7 M. They can be reused after heat treatment at 300 °C without any drop of performance. Furthermore, we found a principal difference in the effect of annealing of SERS substrates before deposition of the analyte molecules and additional in situ annealing (with molecules) on the intensity of Raman signal. Possible physical origin of the latter effect has been discussed.

Keywords: SERS, gold nanostructures, interference lithography.

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