Semiconductor Physics, Quantum Electronics & Optoelectronics, 23 (2), P. 175-179 (2020).

Influence of microwave radiation on relaxation processes in silicon carbide
Yu.Yu. Bacherikov, V.Yu. Goroneskul, O.Yo. Gudymenko, V.P. Kladko, O.F. Kolomys, I.M. Krishchenko, O.B. Okhrimenko*, V.V. Strelchuk

V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 41, prospect Nauky, 03680 Kyiv, Ukraine *E-mail:

Abstract. The methods of optical absorption spectroscopy and high-resolution diffractometry have been used to study the influence of microwaves on characteristics of crystalline SiC. Being based on the X-ray analysis data, optical transmission, photoluminescence, and photoluminescence excitation spectra, it has been shown that the microwave treatment leads to a change in the gradient of internal mechanical stresses and an increase in the migration capability of dislocations and, as a result, to redistribution of recombination centers in the sample.

Keywords: microwave radiation, relaxation processes, silicon carbide, optical absorption spectroscopy, high-resolution diffractometry.

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