Semiconductor Physics, Quantum Electronics & Optoelectronics, 23 (2), P. 208-213 (2020).

Shunt current in InAs diffused photodiodes
A.V. Sukach1, V.V. Tetyorkin1, А.І. Тkachuk2

1V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine 2V. Vynnychenko Central Ukrainian State Pedagogical University, Kropyvnytskyi, Ukraine

Abstract. The shunt current has been investigated in p+-n type InAs diffused photodiodes. The mesastructures were prepared by etching in Br2-HBr solution and sequentially etched in CP-4 and in a lactic acid based etchants. The surface of mesastructures was passivated in alcohol solution of Na2S. After each chemical treatment, the current-voltage and capacitance-voltage characteristics were measured as functions of bias voltage and temperature. It has been shown that the shunt current contains ohmic and non-ohmic components. The evidences have been obtained that the non-ohmic shunt current originates from the space-charge limited current in the surface inversion layer and the trap-assisted tunneling current in the bulk.

Keywords: InAs, shunt current, inversion surface layer.

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