Semiconductor Physics, Quantum Electronics & Optoelectronics, 24 (2), P. 185-191 (2021).


Spintronics phenomena induced by THz radiation in narrow-gap HgCdTe thin films in an external constant electric field
Z.F. Tsybrii1*, S.N. Danilov2, J.V. Gumenjuk-Sichevska1, N.N. Mikhailov3, S.A. Dvoretskii3,4, E.O. Melezhik1, F.F. Sizov1

1V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine,
41, prosp. Nauky, 03680 Kyiv, Ukraine
2Terahertz Center, University of Regensburg, 93040 Regensburg, Germany
3Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the RAS,
13, Ac. Lavrentieva ave., Novosibirsk, Russia, 630090, Russian Federation
4Tomsk State University, Tomsk 634050, Russian Federation
*Corresponding author e-mail: tsybrii@isp.kiev.ua

Abstract. The responses of uncooled (T = 300 K) and cooled to T = 78 K antenna-coupled Hg1–xCdxTe-based narrow-gap thin-film photoconductors having large spin-orbit coupling and irradiated by the terahertz (THz) radiation (linearly or circularly polarized) have been investigated. Powerful THz radiation excitation causes photocurrents, which signs and magnitudes are controlled by orientation of antenna axes, an external constant electric field direction and orientation of the polarized (circular or linear) radiation electric field falling onto photoconductors. The observed effects seem to be caused by the spin currents observed in devices where spintronic effects are revealed. spintronic phenomena, photoconductors, THz radiation, HgCdTe.

Keywords: spintronic phenomena, photoconductors, THz radiation, HgCdTe.

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