Semiconductor Physics, Quantum Electronics & Optoelectronics, 24 (2), P. 192-199 (2021).


Simulation analysis to optimize the performance of homojunction p-i-n In0.7Ga0.3N solar cell
S. Hussain, Md. T. Prodhan and Md. M. Rahman

Department of Electrical and Electronic Engineering, University of Dhaka,
Dhaka-1000, Bangladesh
Corresponding author e-mail: sakhawat@du.ac.bd, Mobile: +8801716865552

Abstract. Simulation analysis has been carried out to determine the perfect structural parameters of homojunction p-i-n In0.7Ga0.3N solar cell to obtain maximum overall efficiency. It has been demonstrated that n-layer of 16-nm, intrinsic layer (i-layer) of 0.5-μm and p-layer of 3-μm thickness with specific doping concentrations of 1·1020 cm–3 for n-layer and 1·1018 cm–3 for p-layer allow us to achieve the maximum efficiency 29.21%. The solar cell structure provides an open circuit voltage of 1.0 V, short circuit current density of 33.15 mA/cm2 and the percentage of fill factor value of 88.03%. However, the efficiency drops drastically, if the dislocation density in i-layer is higher than 1·1014 cm–3, and unintentional doping concentration within i-layer is beyond 1.5·1016 cm–3 of the structure.

Keywords: InGaN, homojunction, p-i-n solar cell, solar cell capacitance simulator (SCAPS).

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