V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, prospect Nauky, 03680 Kyiv, Ukraine
*Corresponding author e-mail: yuyu@isp.kiev.ua

Abstract. From the position of conceptions inherent to semiconductor physics and semiconductor technology, the processes occurring in conductors of the second class, which take place due to the current flow in them, have been considered in this paper. It has been shown that using the several composite materials consisting of a porous matrix filled with an electrolyte enables to obtain multilayer structures, in which potential barriers appear in the electrolyte medium. These barriers are caused by the difference in properties inherent to layers of porous matrix. Considered here has been the prospect of creating the new devices based on the second-class conductors capable to control the direction and magnitude of the current flow in these conductors that are in a liquid state (in electrolytes). In other words, it was considered the possibility to obtain the ionic devices that are closest in their functional properties to basic electronic devices, such as diodes, transistors, etc.

Keywords: second class conductors, current flow control, ionic devices, potential barriers in the electrolyte, multilayer porous composite materials.

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