Semiconductor Physics, Quantum Electronics & Optoelectronics, 25 (2), P. 157-163 (2022).

Amplification of photoelectric injection in the photodiode based on large-grain cadmium telluride films

A.K. Uteniyazov1, K.A. Ismailov1, A.S. Muratov1, B.K. Dauletmuratov2, A.B. Kamalov2

1Karakalpak State University named after Berdakh, Uzbekistan,
1, Abdirov str., 230012 Nukus, Republic of Karakalpakstan
2Nukus State Pedagogical Institute named after Ajiniyaz
P. Seyitov str., Nukus, Republic of Karakalpakstan

Abstract. The results of studies of photoelectric injection amplification in the Al–Al2O3p-CdTe–Mo structure at high bias voltages for the forward current are presented. It has been shown that the spectral sensitivity reaches its maximum value Sλ = 8.4∙104 A/W, when the diode is illuminated with the “own” light at λ = 450 nm and V = 7 V, while when it is illuminated with the “impurity” light at λ = 950 nm Sλ = 4.3∙104 A/W under the same bias voltage. It has been established that when illuminating the structure with the “own” light, the positive feedback mechanism is realized, and when illuminating with “impurity” light, the parametric amplification mechanism is realized.

Keywords: semiconductor films, photodetectors, sensitivity, current-voltage characteristics.

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