Semiconductor Physics, Quantum Electronics and Optoelectronics, 25 (2) P. 157-163 (2022).
DOI: https://doi.org/10.15407/spqeo25.02.157

References

1. Uteniyazov A.K., Leyderman A.Y., Gafurova M.V. et al. The effect of ultrasonic treatments on current transport processes in Al-Al2O3-p-CdTe-Mo struc-ture. Advances in Materials Science and Engineering. 2021. 2021. Article ID 8836368, 6 p. https://doi.org/10.1155/2021/8836368

2. Mirsagatov Sh.A., Muzafarova S.A., Baiyev M.S., Achilov A.S. The study of real structures of a diode with a Schottky barrier Al-p-CdTe. Uzb. Phys. J. 2010. No 12. P. 154-160.

3. Achilov A.S., Zaveryukhin B.N., Kalanov M.U., Rustamova V.M. X-ray studies structures of a new type of A2B6 electromagnetic radiation receiver. Reports of the Academy of Sciences of RUz. 2014. No 2. P. 24-26.

4. Uteniyazov A.K., Ismailov K.A. The spectral distribution of photosensitivity of Al-Al2O3-p-CdTe-Mo structure. Reports of the Academy of Sciences of RUz. 2019. No 5. P. 27-31.

5. Vikulin I.M., Kurmashev Sh.D., Stafeev V.I. Injection-based photodetectors. Semiconductors. 2008. 42, Issue 1. P. 112-127. https://doi.org/10.1134/S1063782608010168

6. Stafeev, V.I. Structure and properties of Cd x Hg1?x Te-metal contacts. Semiconductors . 2009. 43. P. 608-611. https://doi.org/10.1134/S1063782609050133

7. Kurmashev S.D., Stafeev V.I., Vikulin I.M., Sofronkov A.N. Injection-amplification IR-photodiodes. Proceedings SPIE. 1997. 3182.

8. Uteniyazov A.K. Photoelectric injection amplifica-tion of Al-Al2O3-p-CdTe-Mo structures at low bias voltages. Karakalpak Scientific Journal. 2020. 3, No 2. Art. 5.

9. Mirsagatov Sh.A., Uteniyazov A.K. The mechanism of current transport in the structure Al-p-CdTe-Mo with different thickness of the base. Phys. Surface Eng. 2015. 13, No 3. P. 325-329.

10. Uteniyazov A.K., Leyderman A.Yu., Ayukhanov R.A., Esenbaeva E.S., Gafurova M.V. Features of current transport in Al-Al2O3-p-CdTe-Mo structure. SPQEO. 2020. 23, No 4. P. 339-345. https://doi.org/10.15407/spqeo23.04.339