Semiconductor Physics, Quantum Electronics & Optoelectronics, 26 (2), P. 140-146 (2023).
DOI: https://doi.org/10.15407/spqeo26.02.140
Formation of ZnO films on SiC/porous Si/Si substrates
1Dmytro Motornyi Tavria State Agrotechnological University, 18, B. Khmelnitsky Ave., 72312 Melitopol, Ukraine Abstract.
Reactive magnetron sputtering was used to obtain ZnO films on SiC/porous Si/Si substrates. The silicon carbide film on the surface of porous Si was obtained using chemical substitution of atoms. It has been shown that ZnO films grown at the partial oxygen pressure 0.6 Pa are characterized by a smoother and more uniform surface than coatings grown at the oxygen pressure 0.1 Pa. Being based on the analysis of Raman and photoluminescence spectra, it has been shown that the increase in partial pressure of oxygen leads to the increase in structural disorder of the ZnO crystal lattice, on the one hand, and at the same time to a decrease in the concentration of intrinsic defects, including ionized oxygen vacancies Oi, on the other hand.
Keywords:reactive magnetron sputtering, porous Si, silicon carbide film, chemical substitution of atoms, Raman and photoluminescence spectra.
V.V. Kidalov1,2,
A.F. Dyadenchuk1,
V.A. Baturin3,
O.Yu. Karpenko3,
O.F. Kolomys4,
V.V. Ponomarenko4,
Z.V. Maksimenko4,
V.V. Strelchuk4,
Yu.Yu. Bacherikov4*,
O.B. Okhrimenko4*
2Experimentelle Physik 2, Technische Universität Dortmund, 44221 Dortmund, Germany
3Institute of Applied Physics, NAS of Ukraine, 58, Petropavlivska str., 40030 Sumy, Ukraine
4V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, prosp. Nauky, 03680 Kyiv, Ukraine
*Corresponding authors e-mail: olga@isp.kiev.ua; yuyu@isp.kiev.ua
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