Space charge region recombination, non-radiative exciton recombination and the band-narrowing effect in high-efficiency silicon solar cells
A.V. Sachenko, V.P. Kostylyov, V.M. Vlasiuk, I.O. Sokolovskyi, M. Evstigneev, D.F. Dvernikov, R.M. Korkishko, V.V. Chernenko Semiconductor physics, quantum electronics and optoelectronics, 26 (2), P. 127-139 (2023).
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Formation of ZnO films on SiC/porous Si/Si substrates
V.V. Kidalov, A.F. Dyadenchuk, V.A. Baturin, O.Yu. Karpenko, O.F. Kolomys, V.V. Ponomarenko, Z.V. Maksimenko, V.V. Strelchuk, Yu.Yu. Bacherikov, O.B. Okhrimenko Semiconductor physics, quantum electronics and optoelectronics, 26 (2), P. 140-146 (2023).
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Transformation of defects in semiconductor structures under action of magnetic fields stimulated by drift phenomena
G.V. Milenin, R.A. Redko Semiconductor physics, quantum electronics and optoelectronics, 26 (2), P. 147-151 (2023).
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Diffuse reflectance spectroscopy of solid solutions in the Ag7PS6-Ag8GeS6 system
T.O. Malakhovska, A.I. Pogodin, M.J. Filep, Ya.I. Studenyak, O.P. Kokhan, O.V. Zubaka, V.Yu. Izai, P. Kus Semiconductor physics, quantum electronics and optoelectronics, 26 (2), P. 152-158 (2023).
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Kinetics of charge carriers in bilateral macroporous silicon
V.F. Onyshchenko, L.A. Karachevtseva, K.V. Andrieieva, N.V. Dmytruk, A.Z. Evmenova Semiconductor physics, quantum electronics and optoelectronics, 26 (2), P. 159-164 (2023).
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A method for fast calculating the electronic states in 2D quantum structures based on AIIIBV nitrides
V.A. Slipokurov, P.P. Korniychuk, A.V. Zinovchuk Semiconductor physics, quantum electronics and optoelectronics, 26 (2), P. 165-172 (2023).
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Hetero- and low-dimensional structures
Peculiarities of the effect of different types of SOR nanoimpurities on the value of ionic component of the electrical conductivity of the homeotropically aligned nematic liquid crystal 6 ÑÂ
Y.A. Garbovskiy, P. Kopcansky, O.V. Kovalchuk, T.M. Kovalchuk, L.V. Volokh Semiconductor physics, quantum electronics and optoelectronics, 26 (2), P. 173-179 (2023).
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Narrow-band controllable sources of IR emission based on one-dimensional magneto-optical photonic structures
E.F. Venger, V.O. Morozhenko Semiconductor physics, quantum electronics and optoelectronics, 26 (2), P. 180-187 (2023).
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Microprismatic plane-focusing Fresnel lenses for light concentration in solar photovoltaic modules
E.E. Antonov, S.V. Kondratenko, V.S. Lysenko, V.V. Petrov, V.N. Zenin Semiconductor physics, quantum electronics and optoelectronics, 26 (2), P. 188-200 (2023).
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Laser-induced thermal emission of carbon microparticles on transparent heat-sink substrates
K.S. Zelenska, S.E. Zelensky, O.S. Kolesnik, Toru Aoki, P.O. Teselko Semiconductor physics, quantum electronics and optoelectronics, 26 (2), P. 201-207 (2023).
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The spectral and microscopical study of phytosynthesized plasmonic gold nanoparticles
V. Bartosova, R. Smolkova, L.M. Grishchenko, R.P. Linnik, V.V. Lisnyak, R. Mariychuk Semiconductor physics, quantum electronics and optoelectronics, 26 (2), P. 208-214 (2023).
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Optoelectronics and optoelectronic devices
Comprehensive study of group III-nitride light emitting diode structures based on sapphire and ScAlMgO4 (0001) substrate for high intensity green emission
F.Z. Tithy, S. Hussain
Semiconductor physics, quantum electronics and optoelectronics, 26 (2), P. 215-221 (2023).
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Design of a LED driver with a flyback topology for intelligent lighting systems with high power and efficiency
V.I. Kornaga, D.V. Pekur, Yu.V. Kolomzarov, V.M. Sorokin, Yu.E. Nikolaenko
Semiconductor physics, quantum electronics and optoelectronics, 26 (2), P. 222-229 (2023).
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Kinetics of narrow-spectrum LED glow under pulsed power
V.A. Andriichuk, M.S. Nakonechnyi, Ya.O. Filiuk
Semiconductor physics, quantum electronics and optoelectronics, 26 (2), P. 230-235 (2023).
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Sensors
Study of low-energy gamma-ray detection performance of silicon photomultiplier with LaBr3(Ce) scintillator
K. Huseynzada, A. Mammadli, K. Isayev, J. Naghiyev, M. Holik, V.V. Tryshyn, S.I. Lyubchyk, D.V. Pekur
Semiconductor physics, quantum electronics and optoelectronics, 26 (2), P. 236-241 (2023).
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Wear resistance of sensors based on surface plasmon resonance phenomenon
A.V. Fedorenko, N.V. Kachur, V.P. Maslov
Semiconductor physics, quantum electronics and optoelectronics, 26 (2), P. 242-246 (2023).
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