Semiconductor Physics, Quantum Electronics & Optoelectronics, 26 (2), P. 147-151 (2023).
DOI: https://doi.org/10.15407/spqeo26.02.147

Transformation of defects in semiconductor structures under action of magnetic fields stimulated by drift phenomena

G.V. Milenin1, R.A. Redko1,2

1V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 41, prospect Nauky, 03680 Kyiv, Ukraine
2State University of Telecommunications, 7, Solomenska str., 03110 Kyiv, Ukraine E-mail: milenin.gv@gmail.com; redko.rom@gmail.com

Abstract. The phenomenon of directed motion of mobile charged point defects in semiconductor structures under action of magnetic fields has been discussed. The features of defect drift in sign-changing magnetic fields have been studied. The effect of directional movement of charged defects under the combined action of constant and alternating magnetic fields has been analyzed. Analytical relations have been presented for the drift rate of defects in semiconductor structures under given impacts.

Keywords:magnetic field, charged defect, defect drift.

Full Text (PDF)


Back to Volume 26 N2

Creative Commons License
This work is licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License.