Semiconductor Physics, Quantum Electronics & Optoelectronics, 26 (2), P. 215-221 (2023).
DOI: https://doi.org/10.15407/spqeo26.02.215
Comprehensive study of group III-nitride light emitting diode structures based on sapphire and ScAlMgO4 (0001) substrate for high intensity green emission
Department of Electrical and Electronic Engineering, University of Dhaka, Dhaka-1000, Bangladesh Abstract.
To mitigate the green gap problems existing in GaN/InGaN/AlGaN system on sapphire substrate, an In0.17Ga0.83N/InxGa1–xN/AlyGa1–yN based LED structure on ScAlMgO4 (0001) substrate has been introduced for green light (525…565 nm) emission. On ScAlMgO4 (0001) substrate, 35% of In composition with 1.6 nm well thickness and only 15% of Al composition with 1.1 nm thick AlGaN as capping layer on top provide the best LED structure. It provides minimum equivalent lattice mismatch (0.01%) with reasonable overall elastic energy value (0.47 J/m2). Most importantly, it provides at least 10% brighter green light emission than that of sapphire based LED structure.
Keywords:InGaN-green emission LED, sapphire substrate, ScAlMgO4 (0001) substrate, AlGaN capping layer.
F.Z. Tithy, S. Hussain*
*Corresponding author e-mail: sakhawat@du.ac.bd; Mobile: +8801716865552
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