Semiconductor Physics, Quantum Electronics & Optoelectronics, 28 (2), P. 232–238 (2025).
DOI: https://doi.org/10.15407/spqeo28.02.232
Flash lamp annealing of Cu(In1-xGax)SSe films deposited on polyimide substrate: Crystalline structure and chemical composition
I.P. Tyagulski1, O.Yo. Gudymenko1, A.V. Rusavsky1, S.I. Tiagulskyi2, O.F. Isaieva1, S.V. Kondratenko3, V.S. Lysenko1, D. Flandre4, A.N. Nazarov1,5*
1V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
2Institute of Photonics and Electronics of the Czech Academy of Sciences, Prague, Czech Republic
3Taras Shevchenko National University of Kyiv, Kyiv, Ukraine
4ICTEAM, UCLouvain, Louvain-la-Neuve, Belgium
5National Technical University of Ukraine "Igor Sikorsky Kyiv Polytechnic Institute", Kyiv, Ukraine
*Corresponding author e-mail: nazarov@lab15.kiev.ua
Abstract. In this paper, the effect of sub-millisecond range flash lamp annealing (FLA) on the microstructural and chemical composition of copper indium gallium selenide sulfide (CIGSS) films deposited at low temperature (below 350 °C) on flexible polyimide was studied. The results of scanning electron microscopy (SEM), X-ray diffraction (XRD), and micro-Raman spectroscopy indicate that flash lamp annealing leads to a more homogeneous polycrystalline structure and reduces the defect concentration in the CIGSS layer. Additionally, energy-dispersive X-ray spectroscopic (EDS) measurements show that copper concentration slightly increases, with a slight decrease in the concentration of Ga and In.
Keywords: flash lamp annealing, scanning electron microscopy, X-ray diffraction, micro-Raman spectroscopy.
This work is licensed under a Creative Commons Attribution‑NoDerivatives 4.0 International License.