Semiconductor Physics, Quantum Electronics & Optoelectronics, 29 (2), P. 146-152 (2026).
DOI: https://doi.org/10.15407/spqeo29.02.146

Influence of nonthermal effects of microwave and pulsed magnetic fields on radiative recombination centers in SiC/por-SiC/Er2O3 structures

O.B. Okhrimenko*, O.F. Kolomys, V.V. Strelchuk, A.G. Zhuk, Z.V. Maksimenko, G.M. Androsiuk, Yu.Yu. Bacherikov

V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41 Nauky Avenue, 03028 Kyiv, Ukraine
*Corresponding author e-mail: olga@isp.kiev.ua

Abstract. In this paper, the effect of short-term nonthermal exposure to microwave radiation and pulsed magnetic field (PMF) on photoluminescence characteristics of SiC/por-SiC/Er2O3 structures has been considered. Analysis of the photoluminescence spectra of these structures has shown that the changes observed in the spectra under microwave and PMF exposure are explained by an increase in the migration mobility of dislocations, which in turn leads to a redistribution of recombination centers in the SiC/por-SiC/Er2O3 structure. The influence of PMF on the processes of redistribution of recombination centers in the SiC/por-SiC/Er2O3 structure has been shown more effective than microwave exposure. The mechanisms of action of both microwave radiation and PMF are considered to be those leading to increase in the migration ability of dislocations due to change in the internal state of interacting dislocations and lattice defects.

Keywords: nonthermal microwave action, pulsed magnetic field, photoluminescence, buffer porous layer, erbium oxide, silicon carbide.

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