Semiconductor Physics, Quantum Electronics & Optoelectronics, 29 (2), P. 172-179 (2026).
DOI: https://doi.org/10.15407/spqeo29.02.172
Fabrication, structural, and optical properties of ZnO films obtained by pyrolysis of a chelate compound
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41 Nauky Avenue, 03028 Kyiv, Ukraine Abstract.
Thin ZnO films were chemically obtained from two organic compounds. Chelate (or intracomplex) compounds zinc diethyldithiocaramate and zinc acetylacetonate were used as precursors. The effects of precursor type, growth rate, and post-growth annealing of the films were investigated. The microstructure and optical properties of the films were studied and compared using X-ray diffraction (XRD), atomic force microscopy, Raman scattering, and photoluminescence. The XRD results indicated that all the ZnO films had a polycrystalline hexagonal structure and a preferred orientation with the c-axis perpendicular to the substrate. The morphological and optical properties differ markedly for various ZnO films. The reasons of transformation and the nature of optical transitions were discussed. The most intensive UV emission was obtained for the ZnO films grown from zinc acetylacetonate. The ultraviolet/visible emission intensity ratio was 15, comparable to that of epitaxial ZnO films. A simple way for fabricating high-quality ZnO films was presented.
Keywords: ZnO, thin films, metal-organic chemical vapor deposition technique, photoluminescence, atomic force microscopy, X-ray diffraction, Raman spectroscopy.
V.S. Khomchenko*, L.V. Zavyalova, V.V. Strelchuk, O.F. Kolomys, A.S. Nikolenko, O.Yo. Gudymenko, A.A. Korchovyi, V.A. Danko, B.A. Snopok
*Corresponding author e-mail: khomchenkov@yahoo.com
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