Semiconductor Physics, Quantum Electronics & Optoelectronics, 2 (2), P. 45-49 (1999)
https://doi.org/10.15407/spqeo2.02.045


PACS 84.60.J, 72.20.J

Efficiency limit for diffusion silicon solar cells at concentrated illumination

A.P. Gorban', V.P. Kostylyov, A.V. Sachenko, A.A. Serba

Institute of Semiconductor Physics of NASU,45, prospect Nauki, 252028 Kiev, Ukraine

Semiconductor Physics, Quantum Electronics & Optoelectronics. 1999. V. 2, No 2. P.45-49. Eng. Il.: 5. Ref.:15

Abstract. A general approach has been developed to calculation of photoconversion efficiency of thin-base silicon solar cells with double-sided metallization for concentrated solar illumination. The full absorption of photoactive radiation has been theoretically simulated, the light absorption by free charge carriers in heavily doped regions in AM0 conditions was taken into account. It was found that the efficiency of photoconversion h at K 100 can be as high as 27%.

Keyword: photoconversion efficiency, silicon solar cells, concentrated illumination

Paper received 12.05.99; revised manuscript received 07.07.99; accepted for publication 12.07.99.

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