Bipolarons in anisotropic crystals and low dimensional structures N. I. Kashirina, E. V. Mozdor, E. A. Pashitskij, V. I. Sheka
Semiconductor physics, quantum electronics and optoelectronics, 2 (2), P. 007-010 (1999).
Interface electronic properties of heterojunctions based on nanocrystalline silicon E. B. Kaganovich, S. I. Kirillova, E. G. Manoilov, V. Ye. Primachenko, S. V. Svechnikov
Semiconductor physics, quantum electronics and optoelectronics, 2 (2), P. 011-014 (1999).
Self-consistent method for optimization of parameters of diode temperature sensors N. R. Kulish, Yu. M. Shwarts, V. I. Borblik, Ye. F. Venger, V. N. Sokolov
Semiconductor physics, quantum electronics and optoelectronics, 2 (2), P. 015-027 (1999).
Separate determination of thickness and optical parameters by surface plasmon resonance: accuracy consideration O. V. Rengevich, Yu. M. Shirshov, Yu. V. Ushenin, A. G. Beketov
Semiconductor physics, quantum electronics and optoelectronics, 2 (2), P. 028-035 (1999).
Polarization unstabilities in a quasi-isotropic He-Ne laser in axial magnetic field G. L. Kononchuk, S. M. Yegorov
Semiconductor physics, quantum electronics and optoelectronics, 2 (2), P. 036-041 (1999).
On the collection of photocurrent in solar cells with a contact grid A. V. Sachenko, A. P. Gorban
Semiconductor physics, quantum electronics and optoelectronics, 2 (2), P. 042-044 (1999).
The efficiency limit for diffusion silicon solar cells at concentrated illumination A. P. Gorban, V. P. Kostylyov, A. V. Sachenko, A. A. Serba
Semiconductor physics, quantum electronics and optoelectronics, 2 (2), P. 045-049 (1999).
Evidence for photochemical transformations in porous silicon V. B. Shevchenko, V. A. Makara, O. V. Vakulenko, O. I. Dacenko, O. V. Rudenko
Semiconductor physics, quantum electronics and optoelectronics, 2 (2), P. 050-053 (1999).
Investigation of the photoelastic effect in Si at high values of the absorptivity I. I. Boiko, Ye. F. Venger, E. V. Nikitenko, B. K. Serdega
Semiconductor physics, quantum electronics and optoelectronics, 2 (2), P. 054-058 (1999).
Relaxation of photodarkening in SiO-As 2 (S,Se) 3 composite layers I. Z. Indutnyi, P. Ye. Shepeliavyi, V. I. Indutnyi
Semiconductor physics, quantum electronics and optoelectronics, 2 (2), P. 059-062 (1999).
Raman spectra of Ag- and Cu-photodoped chalcogenide films A. V. Stronski, M. Vlcek, A. I. Stetsun, A. Sklenar, P. Ye. Shepeliavyi
Semiconductor physics, quantum electronics and optoelectronics, 2 (2), P. 063-068 (1999).
Thin films of organic molecular crystals possesing type B lattice: spatial structure of dibenzotetra-azaannulene film is related to its thickness B. A. Snopok, Ya. O. Lampeka
Semiconductor physics, quantum electronics and optoelectronics, 2 (2), P. 069-072 (1999).
TiB 2 /GaAs and Au-TiB 2 /GaAs structural transformations at short-term thermal treatment T. G. Kryshtab, P. M. Lytvyn, M. O. Mazin, O. S. Lytvyn, I. V. Prokopenko, V. N. Ivanov
Semiconductor physics, quantum electronics and optoelectronics, 2 (2), P. 073-077 (1999).
Investigation of growth conditions, crystal structure and surface morphology of SmS films prepared by MOCVD technique N. M. Volodin, L. V. Zavyalova, A. I. Kirillov, S. V. Svechnikov, I. V. Prokopenko, A. V. Khanova
Semiconductor physics, quantum electronics and optoelectronics, 2 (2), P. 078-083 (1999).
Photosensitive heterostructures CdTe-PbTe prepared by hot-wall tecnique S. Movchan, F. Sizov, V. Tetyorkin
Semiconductor physics, quantum electronics and optoelectronics, 2 (2), P. 084-087 (1999).
Varistor-type voltage-current characteristics in porous silicon O. V. Vakulenko, S. V. Kondratenko, B. M. Shutov
Semiconductor physics, quantum electronics and optoelectronics, 2 (2), P. 088-089 (1999).
Semiconductor sensors for dosimetry of epithermal neutrons P. G. Litovchenko, R. Moss, F. Stecher-Rasmussen, K. Appelman, L. I. Barabash, T. I. Kibkalo, V. F. Lastovetsky, A. P. Litovchenko, M. B. Pinkovska
Semiconductor physics, quantum electronics and optoelectronics, 2 (2), P. 090-091 (1999).
