Volume 2 (1999) Author Index (pdf 90K)

 

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International Scientific Journal
SEMICONDUCTOR PHYSICS, QUANTUM ELECTRONICS
AND OPTOELECTRONICS


Contents

(7) Bipolarons in anisotropic crystals and low dimensional structures
N. I. Kashirina, E. V. Mozdor, E. A. Pashitskij, V. I. Sheka

(11) Interface electronic properties of heterojunctions based on nanocrystalline silicon
E. B. Kaganovich, S. I. Kirillova, E. G. Manoilov, V. Ye. Primachenko, S. V. Svechnikov

(15) Self-consistent method for optimization of parameters of diode temperature sensors
N. R. Kulish, Yu. M. Shwarts, V. I. Borblik, Ye. F. Venger, V. N. Sokolov

(28) Separate determination of thickness and optical parameters by surface plasmon resonance: accuracy consideration
O. V. Rengevich, Yu. M. Shirshov, Yu. V. Ushenin, A. G. Beketov

(36) Polarization unstabilities in a quasi-isotropic He-Ne laser in axial magnetic field
G. L. Kononchuk, S. M. Yegorov

(42) On the collection of photocurrent in solar cells with a contact grid
A. V. Sachenko, A. P. Gorban,

(45) The efficiency limit for diffusion silicon solar cells at concentrated illumination
A. P. Gorban,, V. P. Kostylyov, A. V. Sachenko, A. A. Serba

(50) Evidence for photochemical transformations in porous silicon
V. B. Shevchenko, V. A. Makara, O. V. Vakulenko, O. I. Dacenko, O. V. Rudenko

(54) Investigation of the photoelastic effect in Si at high values of the absorptivity
I. I. Boiko, Ye. F. Venger, E. V. Nikitenko, B. K. Serdega

(59) Relaxation of photodarkening in SiO-As 2 (S,Se) 3 composite layers
I. Z. Indutnyi, P. Ye. Shepeliavyi, V. I. Indutnyi

(63) Raman spectra of Ag- and Cu-photodoped chalcogenide films
A. V. Stronski, M. Vlcek, A. I. Stetsun, A. Sklenar, P. Ye. Shepeliavyi

(69) Thin films of organic molecular crystals possesing type B lattice: spatial structure of dibenzotetra-azaannulene film is related to its thickness
B. A. Snopok, Ya. O. Lampeka

(73) TiB 2 /GaAs and Au-TiB 2 /GaAs structural transformations at short-term thermal treatment
T. G. Kryshtab, P. M. Lytvyn, M. O. Mazin, O. S. Lytvyn, I. V. Prokopenko, V. N. Ivanov

(78) Investigation of growth conditions, crystal structure and surface morphology of SmS films prepared by MOCVD technique
N. M. Volodin, L. V. Zavyalova, A. I. Kirillov, S. V. Svechnikov, I. V. Prokopenko, A. V. Khanova

(84) Photosensitive heterostructures CdTe-PbTe prepared by hot-wall tecnique
S. Movchan, F. Sizov, V. Tetyorkin

(88) Varistor-type voltage-current characteristics in porous silicon
O. V. Vakulenko, S. V. Kondratenko, B. M. Shutov

(90) Semiconductor sensors for dosimetry of epithermal neutrons
P. G. Litovchenko, R. Moss, F. Stecher-Rasmussen, K. Appelman, L. I. Barabash, T. I. Kibkalo, V. F. Lastovetsky, A. P. Litovchenko, M. B. Pinkovska