Semiconductor Physics, Quantum Electronics & Optoelectronics, 2 (2), P. 54-58 (1999)

PACS 78.20.C

Investigation of the photoelastic effect in si at high values of the absorptivity

I. I. Boiko, Ye. F. Venger, E. V. Nikitenko, B. K. Serdega

Institute of Semiconductor Physics of NASU, 45, prospect Nauki , 252028 Kiev, Ukraine
Phone (044) 265-4020; e-mail:

Semiconductor Physics, Quantum Electronics & Optoelectronics. 1999. V. 2, No 2. P.54-58. Eng. Il.: 3. Ref.:8

Abstract. The birefrigence effect induced by uniaxial elastic deformation has been investigated in monocrystalline Si using theoretical and experimental technigues. To improve a measuring system sensitivity in the range of band absorption, polarization modulation of reffected emission was used. Deformation characteristics of this effect has been measured. The main results obtained for probing light wavelengths from the range of crystal transparency are in a good accordance with conclusions of previons studies. In the range of strong absorption, a considerable change of effect characteristic shapes was found, and their satisfactory accordance with results of theoretical estimations was also ascertained.

Keywords: birefrigence, polarization, modulation, photovoltage, anisotropy, thermal stress.

Paper received 10.03.99; revised manuscript received 01.06.99; accepted for publication 12.07.98.

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