Semiconductor Physics, Quantum Electronics & Optoelectronics, 2 (2), P. 59-62 (1999)
https://doi.org/10.15407/spqeo2.02.059


PACS 78.66J,F, 81.15, 78.40.P, 73.61.J, 73.50.M

Relaxation of photodarkening in SiO-As2(S,Se)3 composite layers

I. Z. Indutnyi, P. E. Shepeliavyi, V. I. Indutnyi*

Institute of Semiconductor Physics of NASU, 45, prospect Nauki , 252028 Kiev, e-mail: indutn@dep14.semicond.kiev.ua
*Institute for Problems of Information Recording, National Academy of Sciences, ul. Shpaka, 2, Kyiv-113, 252113, Ukraine

Semiconductor Physics, Quantum Electronics & Optoelectronics. 1999. V. 2, No 2. P.59-62. Eng. Il.:5. Ref.:11

Abstract. Investigated in this work is the reversible photostimulated red absorption edge shift (photodarkening), DEg, of As2(S,Se)3 nanoparticles embedded into the SiO matrix. As compared to continuous chalcogenide films, the remarkable DEg increase (up to 4 times) with decreasing of chalcogenide particle sizes in composite SiO-As2(S,Se)3 layers was revealed. The exponential dependence of DEg on storing time at different temperatures has been obtained. An activation energy of the transition of As2S3 nanoparticles structure from a metastable photoexposed state to a ground annealed state is equal to 0.78 0.06 eV. The effects are related to a spatial confinement of a photoexcited carrier diffusion length and an influence of particle sizes on intermediate-range order scale structure relaxation in the chalcogenide nanoparticles.

Keywords: photodarkening, chalcogenide glasses, nanoparticles, SiO-As2S3 , SiO-As2Se3

Paper received 25.05.99; revised manuscript received 24.06.99; accepted for publication 12.07.99.

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