Semiconductor Physics, Quantum Electronics & Optoelectronics, 2 (2), P. 84-87 (1999)

PACS 71.28, 72.20, 73.40

Photosensitive heterostructures CdTe-PbTe prepared by hot-wall technique

S. Movchan, F. Sizov, V. Tetyorkin

Institute of Semiconductor Physics of NASU, 45, prospect Nauki , 252028 Kiev, Ukraine

Semiconductor Physics, Quantum Electronics & Optoelectronics. 1999. V. 2, No 2. P.84-87. Eng. Il.:4. Ref.:9

Abstract. Hot-wall technique has been used for preparation of CdTe-PbTe heterostructures. BaF2 single crystals served as substrates. Electrical, photoelectric properties as well as noise spectra were investigated. Heterostructures exhibit photosensitivity up to room temperatures in the middle infrared (IR) region. In the heterostructures investigated at room temperature the 1/f noise is observed at frequencies much less compared to those ones observed in PbSe photoresistors (f = 3000 Hz) for the same IR region. Carrier transport mechanisms and band diagram of the heterostructures are briefly discussed.

Keywords: narrow-gap semiconductors, heterostructures, photoresponse spectra, carrier transport mechanisms.

Paper 02.07.99; revised manuscript received 05.07.99; accepted for publication 12.07.99.

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