Semiconductor Physics, Quantum Electronics & Optoelectronics, 2 (2), P. 88-90 (1999)

PACS 72.80.Ng, s5.11

Varistor-like current-voltage characteristic of porous silicon

O.V. Vakulenko, S.V. Kondratenko, B.M. Shutov .

Taras Shevchenko Kyiv Univ., 6 Glushkova Prosp., 252127 Kyiv, Ukraine
Tel. 8 044 266 01 62, E-mail:

Semiconductor Physics, Quantum Electronics & Optoelectronics. 1999. V. 2, No 2. P.88-89. Eng. Il.:2. Ref.:7

Abstract. The porous silicon (PS) current-voltage characteristic (CVC) has measured in transverse and longitudinal applied electric field. The obtained CVC has a varistor-like shape. Besides the practical application this confirms the PS grain structure whose influence is discussed in analizing the mechanism of the visible luminescence in PS.

Keywords: varistor, current-voltage characteristic, porous silicon.

Paper received 25.06.99; revised manuscript received 06.07.99; accepted for publication 12.07.99.

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